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Connection structure of dielectric waveguide

A connection structure and dielectric technology, applied in the direction of waveguide, connection device, waveguide-type devices, etc., can solve the problems of high-frequency transmission characteristics, isolation characteristics degradation, etc., and achieve the best electrical length, good reflection characteristics and pass-through characteristics.

Active Publication Date: 2021-06-18
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In such a connection structure, since electromagnetic waves leak from gaps generated between the openings of the dielectric waveguide, the high-frequency transmission characteristics between the dielectric substrates and the isolation characteristics with adjacent high-frequency transmission lines deteriorate.

Method used

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  • Connection structure of dielectric waveguide
  • Connection structure of dielectric waveguide
  • Connection structure of dielectric waveguide

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Embodiment approach 1

[0071] figure 1 It is a longitudinal sectional view showing the connection structure of the dielectric waveguide according to Embodiment 1 of the present invention, which is equivalent to figure 2 Vertical sectional view of the I-I 'line. figure 2 Is it in the first embodiment of the present invention figure 1 Other longitudinal sectional views of the II-II 'line. In addition, image 3 It is shown in Embodiment 1 of the present invention. figure 1 Decomposition perspective view of the conductor layer and conductor through hole.

[0072] In the first embodiment, the structures of the dielectric waveguide formed by the surface layer conductor, the inner layer conductor, and the conductor through hole are mainly described in detail with respect to the structure of the dielectric waveguide formed from the surface layer conductor, the inner layer conductor, and the conductor through hole.

[0073] in figure 1 In the middle, the multilayer dielectric substrate 100 is opposed to the mult...

Embodiment approach 2

[0125] In the above-described first embodiment, the connection structure of the dielectric waveguide as the opening size of the opening 3101, the conductor removing portion 3201, the conductor removing portion 3111, the conductor removing portion 3112, the conductor removing portion 3211, and the conductor removing portion 3212 is described. However, the present invention is not limited to such a connecting structure, and may be set to have a connection structure of a dielectric waveguide having different open sizes.

[0126] Figure 11 It is a longitudinal sectional view showing the connection structure of the dielectric waveguide of the second embodiment of the present invention, which is equivalent to Figure 12 Vertical sectional view of the I-I 'line. Figure 12 Is it in the second embodiment of the present invention Figure 11 Other longitudinal sectional views of the II-II 'line. In addition, Figure 13 It is shown in Embodiment 2 of the present invention. Figure 11 Decompositi...

Embodiment approach 3

[0136] In the above-described first and second embodiment, the connection structure of the dielectric waveguide between the surface layer conductor 1101 of the multilayer dielectric substrate 100 and the surface layer conductor 1201 of the multilayer dielectric substrate 200 is described. On the other hand, in the third embodiment, the connection structure of the dielectric waveguide of the dielectric is disposed in this embodiment will be described.

[0137] Figure 14 It is a longitudinal sectional view showing the connection structure of the dielectric waveguide of the third embodiment of the present invention, which is equivalent to Figure 15 Vertical sectional view of the I-I 'line. Figure 15 Is it in the first embodiment of the present invention Figure 14 Other longitudinal sectional views of the II-II 'line. In addition, Figure 16 It is shown in Embodiment 3 of the present invention. Figure 14 Decomposition perspective view of the conductor layer, conductor via and sheet di...

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PUM

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Abstract

In the structure of electrically connecting multilayer dielectric substrates provided with dielectric waveguides formed of conductor patterns and via holes along the stacking direction in the multilayer dielectric substrate, in the case where a choke structure is provided for electrically connecting the waveguides On the side of the multilayer dielectric substrate, through holes constituting a part of the wall of the dielectric waveguide are arranged in a zigzag pattern.

Description

Technical field [0001] The present invention relates to a connection structure between a dielectric substrate having a dielectric waveguide having a high frequency signal mainly propagating the micro-band and millimeter band. Background technique [0002] In the past, the following connection structure was known that the opening of the dielectric waveguide respectively formed in the dielectric substrate is close to and opposed to the high frequency signal transmission between the dielectric substrate. In such a connection structure, since the electromagnetic wave leaks from the gap between the opening of the dielectric waveguide, the high frequency transmission characteristics between the dielectric substrate, and the isolation characteristics between adjacent high frequency transmission lines. [0003] Therefore, in order to suppress the electromagnetic wave from the gap leakage generated between the opening of the dielectric waveguide, the following choke structure is applied t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/04
CPCH01P3/121H01P1/042H01P5/024H05K1/0251H05K1/115H05K2201/09609H01P1/162H01P3/16H01P5/087
Inventor 吉冈秀浩森本康夫米田尚史广田明道滨田伦一羽立刚
Owner MITSUBISHI ELECTRIC CORP