63 results about "Dielectric waveguides" patented technology

A semiconductor structure includes: a first electrical waveguide formed of a first dielectric material and configured to transmit an electrical signal; a second electrical waveguide formed of the first dielectric material and disposed adjacent to a first side of the first electrical waveguide; and a third electrical waveguide formed of the first dielectric material and disposed adjacent to a second side of the first electrical waveguide opposite the first side. The second electrical waveguide and the third electrical waveguide are configured to form a composite waveguide together with the first electrical waveguide for transmission of the electrical signal.

The invention discloses a device and a method for realizing a near-field dual-polarization perfect Janus dipole, and relates to the technical field of near-field coupling and excitation of dipoles. The implementation device comprises a dual-polarization perfect Janus dipole and two dielectric waveguides which are arranged in parallel. The implementation method comprises the steps of designing parameters of the dielectric waveguides and the dipoles, constructing a rectangular coordinate system, placing the two parallel dielectric waveguides on an xy plane, and placing the dipoles in the middle positions of the parallel dielectric waveguides. P-polarized and s-polarized waves excited by the dipole are coupled to the dielectric waveguide to excite guided waves, an electromagnetic field on the surface of the dielectric waveguide is detected through a detection device, and the near-field coupling characteristic of the dual-polarized perfect dipole is analyzed based on extracted field distribution data. The invention provides a new way for the development of polarization multiplexing photonic devices, quantum routing and on-chip signal processing technologies.

Disclosed herein are components for millimeter-wave communication, as well as related methods and systems. In one aspect, a microelectronic support for millimeter-wave communication includes a millimeter-wave communication transmission line, wherein the transmission line includes a trace in a metal layer, wherein the trace is electrically coupled to a via by a via pad in the metal layer; and a ground plane in the metal layer, wherein one or more metal portions contact the via pad and the ground plane.

A distributed radar system includes a management unit, a plurality of distributed radar units, and a dielectric waveguide network comprising a plurality of dielectric waveguides coupling the management unit to the plurality of distributed radar units. The management unit is configured to generate a reference signal for synchronization of operations of the plurality of distributed radar units. At least one of the distributed radar units may be configured to generate a digital data signal representative of results of a radar sensing operation of the distributed radar unit, the dielectric waveguide network may be configured to propagate a representation of the digital data signal to the management unit, and the management unit may be configured to control at least one operation of the distributed radar system based on the digital data signal.

The invention relates to the technical field of optical chips, and particularly discloses an optical chip and a manufacturing method thereof.The optical chip comprises a multi-layer photon integrated circuit and an electronic integrated circuit, and the multi-layer photon integrated circuit comprises a plurality of photon integrated circuit layers which are sequentially stacked and bonded; an optical path for vertical interconnection of optical signals is formed between every two adjacent photon integrated circuit layers, the topmost photon integrated circuit layer is interconnected and intercommunicated with the electronic integrated circuit, free transmission and interconnection of the optical signals are achieved through the multiple layers of dielectric waveguides, vertical interconnection of the optical signals and optical through holes are achieved through the multiple layers of dielectric optical waveguides and the structure, and the optical signals are transmitted and connected through the optical through holes. And through the multi-layer stacking design, external connection of an expansion unit is facilitated, the design freedom degree is high, and the problems that a traditional optical chip with a multi-layer structure needs to independently design modules for interconnection and is weak in adaptability with a current chip architecture are solved.

A spot-size converter (11) of the present invention is a spot size converter (11) optically coupled to a semiconductor optical device, the spot size converter (11) including, sequentially on a substrate (101), a dielectric waveguide (131, 132, 133), a first cladding (141), a semiconductor waveguide (121, 122), and a second cladding (142) covering the dielectric waveguide (131, 132, 133) and the semiconductor waveguide (121, 122). The spot size converter(11) includes one end portion and another end portion, and light is coupled between the semiconductor optical device and the one end portion. The width of at least a portion of the semiconductor waveguide (121, 122) decreases from the one end portion to the other end portion. The semiconductor waveguide (121, 122) is not disposed in a partial region on a side of the other end portion, and a width of at least a portion of the dielectric waveguide (131, 132, 133) decreases from the one end portion to the other end portion. With this configuration, the present invention can provide a spot size converter that can efficiently couple light between a semiconductor optical device and a dielectric waveguide.

A system includes a VCSEL element, a dielectric waveguide, and a dielectric grating coupler. The VCSEL element includes a first reflector region, a second reflector region opposite to the first reflector region, and an active region between the first reflector region and second reflector region. The dielectric waveguide is integrated with the VCSEL element. The grating coupler is formed on the dielectric waveguide for coupling an electromagnetic wave of the VCSEL element into the dielectric waveguide.

The present invention discloses a waveguide coupling transmission structure of D band, including two coupler chips, which are connected by dielectric waveguides; each of the coupler chips includes a coupler body, a coupler feeder and a GSG pad; the coupler body includes a coupler bottom plate, a wedge-shaped waveguide top plate and a mode converter top plate; the mode converter top plate is rectangular, and the wedge-shaped waveguide top plate is a wedge-shaped plate with a gradually narrowing width from near to far; a first metal via array is arranged between the two side edges of the mode converter top plate and the coupler bottom plate, thereby forming a mode converter of the coupler body; a second metal via array is arranged between the two side edges of the wedge-shaped waveguide top plate and the coupler bottom plate, thereby forming a wedge-shaped waveguide of the coupler body. The present invention uses two couplers and dielectric waveguides to complete the design of the signal transmission structure, which increases the working bandwidth and reduces the in-band ripple within the working bandwidth.

The present invention provides a substrate-integrated notched mirror dielectric waveguide transmission structure and array thereof, belonging to the field of microwave engineering technology. The structure comprises a dielectric substrate, a metal ground plane and a metal plane attached to the lower surface of the dielectric substrate. Air holes or air slots are provided along one side of the dielectric substrate. The air holes or air slots divide the dielectric substrate into three parts, namely dielectric blocks on both sides and a dielectric strip in the middle. The metal plane is located on the upper surface of the dielectric block. The metal plane and the metal ground plane are connected to form a common ground. Compared with traditional dielectric waveguides, this dielectric waveguide transmission structure is easier to achieve planar integration. The integrated design makes the dielectric waveguide transmission structure simple, stable and low-loss. It is suitable for the integrated planar circuit board manufacturing process for millimeter wave terahertz and other frequency bands, and is used for electromagnetic transmission in millimeter wave terahertz and other frequency bands.

An apparatus for connecting a monolithically integrated circuit to antenna elements of an antenna array including a decoupling unit for decoupling a signal emitted by the monolithically integrated circuit in the microwave range into a dielectric waveguide of a distribution network which includes dielectric waveguides and is designed to feed the decoupled signal into the antenna elements of the antenna array. Metal shields between adjacent dielectric waveguides of the distribution network shield the dielectric waveguides of the distribution network from one another.

A dielectric waveguide for propagating high-frequency waves is provided, the dielectric waveguide including a first section having a substantially uniform cross-section; and a second section having a larger cross-section than the first section. A method of manufacturing a dielectric waveguide is also provided. A dielectric waveguide assembly is also provided. A radar device is also provided, including the dielectric waveguide or a dielectric waveguide arrangement including the dielectric waveguide and a holder that at least partially surrounds the dielectric waveguide.

Waveguide antennas and corresponding manufacturing methods are described herein. These include dual-linear antennas. These dual-linear antennas provide efficient transmission and reception of two radio-frequency signals that may be polarized in orthogonal orientations. The electrically conducting features within the dual-linear antenna are manufactured using standard printed circuit board (PCB) manufacturing technology. The final outer form of the dielectric waveguide antenna may be machined by turning on a lathe or similar mechanical technique, cast in a mold, or injection molded, and the final outer form is accurately aligned and registered to the radio-frequency features of the PCB. The dual-polarized antenna device may include multiple pairs of parallel slot antennas fabricated within a planar printed circuit.

A connecting means is provided that has a simple structure, which can suppress deterioration in the transmission characteristics of radio waves and can reliably fix a dielectric waveguide and a waveguide together. [Solution] The device comprises a dielectric waveguide (100) having an inner layer and an outer layer with different dielectric constants, a cylindrical waveguide (200) into which at least a portion of the dielectric waveguide (100) can be inserted, and a pin (300) that penetrates the waveguide (200) and the dielectric waveguide (100) and is configured to suppress transmission loss due to reflected waves at the portion where the dielectric waveguide (100) is inserted into the waveguide (200).

A waveguide assembly, comprising an electrical circuit assembly, a dielectric waveguide with a longitudinal axis (A), and a waveguide transition lying therebetween for transmitting an electromagnetic wave between the electrical circuit assembly and the dielectric waveguide. The waveguide transition has a first electrically conductive plate and a second electrically conductive plate which are arranged between the electrical circuit assembly and the dielectric waveguide in an offset manner to each other in the direction of the longitudinal axis (A) of the dielectric waveguide.

The present invention discloses a hybrid resonance-based integrated optical chip and a preparation method, and relates to the field of optoelectronic integration technology. The present invention comprises a silicon substrate, a buried oxide layer is deposited on the top of the silicon substrate, a multilayer rectangular waveguide is installed above the buried oxide layer, one end of the multilayer rectangular waveguide is kept flush with the buried oxide layer, and a silicon rectangular waveguide is installed on the other end, the end of the multilayer rectangular waveguide facing the center of the buried oxide layer is provided with a reverse tapered portion, and the end of the silicon rectangular waveguide away from the center of the buried oxide layer is provided with a forward tapered portion. The present invention realizes the hybrid integration of a dielectric-metal hybrid resonant cavity with on-chip silicon and ordinary dielectric waveguides based on on-chip optical interconnection, and utilizes the strong coupling between optical and plasma modes to excite quasi-continuous spectrum bound states, which can not only realize high-sensitivity on-chip optical sensing, but also greatly improve the quality factor and have low transmission loss.

The invention discloses a Janus antenna array device and method for realizing one-way near-field coupling of a coupling surface. More flexible near-field directional excitation of light is realized. The device of the Janus antenna array for realizing the unidirectional near-field coupling of the coupling surface comprises a feed network structure and an outer coupler, the outer coupler comprises two dielectric waveguides which are parallel to each other, and the two dielectric waveguides are arranged at an interval to form an assembly space; the feed network structure comprises a feed network and a plurality of Janus antennas based on Janus dipoles, the Janus antennas are connected to the feed network, the Janus antennas are arranged in the assembly space in an array mode, each Janus antenna is provided with an electric dipole and a magnetic dipole, and the electric dipoles and the magnetic dipoles are perpendicular to each other and have phase differences. The magnetic dipoles correspond to the width direction of the assembly space, and the electric dipoles correspond to the length direction of the assembly space so as to excite quasi-TM waves in the dielectric waveguide.

An UC dielectric waveguide of the embodiments includes: a dielectric substance wiring propagating a terahertz wave; and a medium disposed around the dielectric substance wiring and having a large refractive index difference with respect to the dielectric substance wiring. A THz circuit of the embodiments includes a dielectric substance THz circuit connected between a first and second UC dielectric waveguides. The dielectric substance THZ circuit includes a circuit including a linear-shaped UC dielectric waveguide, a bent-shaped UC dielectric waveguide, and a Y-coupled branch circuit. There are included a first holding unit holding the first UC dielectric waveguide and a second holding unit holding the second UC dielectric waveguide. The THZ circuit of the embodiments may include a 2×2 evanescent coupler. Provided is a THz circuit having mechanical strength obtained by applying the UC dielectric waveguide having high confinement and transmission efficiencies of THz waves with a simple structure.

A dielectric waveguide arrangement for radar equipment, comprising a dielectric waveguide and a mount that at least partially encloses the dielectric waveguide, the front end of the mount having at least one recess or protuberance.

Techniques pertaining to designs of a helical antenna as a coupler for dielectric waveguides for high data rate communications are described. A coupler to a waveguide cable is configured to allow the waveguide cable to connect to an integrated circuit (IC) chip in a direction normal to the IC chip. The coupler includes a helical antenna which includes a core, a helical structure in the core, and a cladding surrounding the core.

Dielectric waveguide arrangement for a radar device, comprising a dielectric waveguide and a holder which at least partially encompasses the dielectric waveguide, wherein the holder has at least one recess or protrusion on its end face.

A device includes a semiconductor substrate, a light source displaced from the semiconductor substrate by a first displacement, a first dielectric waveguide displaced from the semiconductor substrate by a second displacement, and a second dielectric waveguide displaced from the semiconductor substrate by a third displacement. The second displacement is greater than the first displacement. The first dielectric waveguide overlaps at least a portion of the light source such that light is adiabatically coupled from the light source into the first dielectric waveguide. The third displacement is greater than the second displacement. The second dielectric waveguide overlaps at least a portion of the first dielectric waveguide such that light is coupled from the first dielectric waveguide into the second dielectric waveguide. The second dielectric waveguide includes an edge coupler configured to couple light out of the second dielectric waveguide.

To enable a dielectric waveguide to be connected to a waveguide with low loss. [Solution] A dielectric waveguide converter (1) comprises a dielectric waveguide (10) having a first tapered portion (114) at or near the end of a dielectric portion (13) consisting of an inner dielectric (12) and an outer dielectric (11) having a different dielectric constant, and a first circular waveguide (21) having a second tapered portion (211) in a first circular through hole (210) into which at least a part of the dielectric portion (13) can be inserted or passed, and the first tapered portion (114) of the dielectric waveguide (10) inserted into the first circular through hole (210) and the second tapered portion (211) of the first circular through hole (210) of the first circular waveguide (21) face each other and are in contact with each other.

An interventional medical device (100) includes an insertion tube (120) extending between a proximal end (102) and a distal end (104). The distal end is configured to be inserted into internal tissue of a patient during a medical procedure. The insertion tube has a dielectric waveguide (150) extending between a proximal end and a distal end. The interventional medical device includes a transmitter (230) coupled to the dielectric waveguide at a distal end. The transmitter transmits a radio frequency signal along the dielectric waveguide from a distal end to a proximal end.

Apparatus and associated methods relate to galvanically isolating one or more sensors from a controller. Power and control signals are provided to an isolation system via RF electromagnetic waves transmitted from the controller to the isolation system via a dielectric waveguide. The received RF electromagnetic waves are converted into an RF electrical signal and then the RF electrical signal is separated into power and control signal components. The RF power signal component is rectified and regulated so as to provide power to the isolation system. A sensor interrogator is electrically connected to one or more sensors so as to receive sense signals therefrom. The sensor interrogator generates a data signal indicative of one or more physical metrics of a potentially hazardous environment in which the one or more sensors are situated. The data signal is converted to RF electromagnetic waves, which are transmitted, via the dielectric waveguide, to the controller.

The present invention relates to the technical field of optical chips, and specifically discloses an optical chip and a manufacturing method thereof, which include a multi-layer photonic integrated circuit and an electronic integrated circuit. The multi-layer photonic integrated circuit includes a plurality of sequentially stacked and bonded photonic integrated circuit layers. An optical path for vertical interconnection of optical signals is formed between adjacent photonic integrated circuit layers. The topmost photonic integrated circuit layer is interconnected with the electronic integrated circuit. Free transmission and interconnection of optical signals are realized through multi-layer dielectric waveguides, vertical optical interconnection and optical vias are realized through multi-layer dielectric optical waveguides and structures, and through a multi-layer stacking design, it is convenient to externally connect expansion units, with high design freedom, solving the problem that traditional optical chips with multi-layer structures need to be separately designed for modules for interconnection and have weak adaptability to the current chip architecture.

In a general aspect, a photonic crystal maser includes a dielectric having an array of cavities periodically aligned to define a photonic crystal structure within the dielectric. The dielectric also includes a region within the array of cavities that defines defects within the photonic crystal structure. An elongated slot extends through the region from a slot opening in a surface of the dielectric at least partially through the dielectric. The elongated slot and the cavity array define a waveguide in the dielectric. The dielectric further includes an input coupler aligned with an end of the elongated slot and configured to couple a reference radio frequency (RF) electromagnetic radiation into the waveguide. The photonic crystal maser also includes a vapor or source of vapor within the elongated slot, and an optical window covering the elongated slot.

To provide a high frequency data system that uses dielectric waveguides to communicate electromagnetic waves carrying data signals.SOLUTION: A wave communication system includes an integrated circuit (102) and a multi-layer substrate (104). The multi-layer substrate (104) is electrically coupled to the integrated circuit (102). The multi-layer substrate (104) includes antenna structures (120TX1A, 120TX1B, 120TX2A, 120TX2B) configured to transmit circularly polarized waves in response to signals from the integrated circuit (102).SELECTED DRAWING: Figure 3

The invention relates to a radar-based filling level measuring device (1), comprising the following parts: a semiconductor component (10) for generating a high-frequency electrical signal (s HF , e HF ) or for receiving a high frequency signal (e HF ) determines a filling level value (L); a dielectric waveguide (11a, b) which is placed in contact with the semiconductor component (10) so as to transmit a high frequency signal (s HF ) as the radar signal (S HF ) is coupled into the antenna and / or the radar signal (E) received from the antenna (12) HF ) as an electrical signal (e HF ) is coupled to the semiconductor component (10); a potting package (13) which radially encapsulates at least the waveguide (11a, b) so that a defined cavity (14) is formed between the waveguide (11a, b) and the potting package (13). The advantage of this design is that, especially at high radar frequencies, the radar signal (S HF 、E HF ) is efficiently coupled in and out of the radar signal (S). The fill-level measuring device (1) can thus be operated in an energy-efficient manner. Due to the implementation of semiconductor components and high radar frequencies, the fill-level measuring device (1) can also be designed compactly without reducing the radar signal (S HF , E HF )’s gathering.

The invention provides a silicon optical chip platform and a manufacturing method, and relates to the technical field of semiconductor processing, and the silicon optical chip platform comprises a silicon substrate, a buried oxide BOX layer and a SiO2 cladding which are sequentially arranged from bottom to top; the functional device is embedded in the SiO2 cladding layer; the third metal electrode is arranged in the SiO2 cladding and is positioned below the bonding region; the dielectric waveguide comprises a multi-layer waveguide structure, and the dielectric waveguide is arranged in the SiO2 cladding and is located between the two third metal electrodes; and the heterogeneous bonding layer is bonded at the bonding area of the SiO2 cladding, and the third metal electrode, the heterogeneous bonding layers made of different materials and the dielectric waveguide form devices with different functions. The silicon optical chip platform in the scheme is based on a CMOS (complementary metal oxide semiconductor) process, so that the purpose of large-scale mass production is achieved.

The invention relates to a device (1) for connecting a monolithic integrated circuit (2) to antenna elements (3) of an antenna array (4), comprising a coupling-out unit for coupling out a signal output by the monolithic integrated circuit (2) in the microwave range into a dielectric waveguide (5) of a distribution network (6) consisting of dielectric waveguides, the invention relates to a distribution network (6) which is designed to feed out-coupled signals into antenna elements (3) of the antenna array (4), a metal shielding structure between adjacent dielectric waveguides (5) of the distribution network (6) shielding the dielectric waveguides (5) of the distribution network (6) from each other. The invention also relates to an antenna array, a radar device and a vehicle.