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Manufacturing method of anti-static touch display integrated screen

A manufacturing method and touch display technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve problems such as interference, and achieve the effects of low manufacturing cost, large production capacity, and small film thickness

Active Publication Date: 2019-12-03
WUHU TOKEN SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above technical problems, the present invention provides a method for manufacturing an antistatic touch display integrated screen, which mainly solves the problem of static electricity that will affect the TFT substrate embedded with the touch layer in the process of module segment processing and subsequent use. The problem of use is to coat a layer of anti-static film on the TFT substrate with embedded touch layer by using magnetron sputtering technology, and control the vacuum degree, substrate temperature, substrate running speed and The sputtering voltage and power make the film layer anti-static without affecting the touch effect of the touch screen and play the role of preventing signal interference. Moreover, the overall process method is simple, the manufacturing cost is low, the production capacity is large, and the film produced Layer performance is more stable

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Provide a TFT substrate with a surface resistance of 1E+7Ω / square, wash the TFT with pure water and lye in sequence, then perform two-fluid spray, ultrapure water spray and high-pressure spray in sequence, and finally pass through cold air in sequence Dry with hot air, check that the surface of the TFT substrate is clean, and set aside;

[0026] 2. Put the clean and dry TFT substrate on the sample holder of the magnetron sputtering chamber, evacuate the magnetron sputtering chamber to 0.25Pa, and heat the TFT substrate to 65°C within 500 seconds, and keep The temperature of the TFT substrate is kept constant, oxygen and argon are fed in, the flow rate of oxygen is 10sccm, the flow rate of argon is 700sccm, the running speed of the TFT substrate is 1.1m / min, and the magnetron sputtering coating starts at a voltage of 335V and a power of 2500W. , coating for 120 seconds, and preparing a sensing layer on the TFT substrate. The material of the sensing layer is indium ti...

Embodiment 2

[0029] 1. Provide a TFT substrate with a surface resistance of 1E+10Ω / square, wash the TFT with pure water and lye in sequence, then perform two-fluid spray, ultrapure water spray and high-pressure spray in sequence, and finally pass through cold air in sequence Dry with hot air, check that the surface of the TFT substrate is clean, and set aside;

[0030] 2. Put the clean and dry TFT substrate on the sample holder of the magnetron sputtering chamber, evacuate the magnetron sputtering chamber to 0.35Pa, and heat the TFT substrate to 55°C within 450 seconds, and keep The temperature of the TFT substrate is kept constant, oxygen and argon are fed in, the flow rate of oxygen is 10sccm, the flow rate of argon is 700sccm, the running speed of the TFT substrate is 1.1m / min, and the magnetron sputtering coating starts at a voltage of 345V and a power of 3500W. , coating for 140 seconds, and preparing a sensing layer on the TFT substrate. The material of the sensing layer is indium t...

Embodiment 3

[0033] 1. Provide a TFT substrate with a surface resistance of 1E+8Ω / square, wash the TFT with pure water and lye in sequence, then perform two-fluid spray, ultrapure water spray and high-pressure spray in sequence, and finally pass through cold air in sequence Dry with hot air, check that the surface of the TFT substrate is clean, and set aside;

[0034]2. Put the clean and dry TFT substrate on the sample holder of the magnetron sputtering chamber, evacuate the magnetron sputtering chamber to 0.3Pa, and heat the TFT substrate to 60°C within 480 seconds, and keep The temperature of the TFT substrate is kept constant, oxygen and argon are fed in, the flow rate of oxygen is 10sccm, the flow rate of argon is 700sccm, the running speed of the TFT substrate is 1.1m / min, and the magnetron sputtering coating starts at a voltage of 340V and a power of 3000W. , coating for 100 seconds, and preparing a sensing layer on the TFT substrate. The material of the sensing layer is indium tin ...

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Abstract

The invention discloses a manufacturing method of an anti-static touch display integrated screen. The invention belongs to the technical field of touch display screens, the manufacturing method comprises the following steps of: cleaning of a TFT substrates; placing the TFT substrate on a sample holder of a magnetron sputtering chamber; keeping the vacuum degree of the magnetron sputtering chamberto be 0.25 Pa to 0.35 Pa; heating the TFT substrate to 55 DEG C to 65 DEG C; introducing oxygen and argon; coating a film under the conditions that the running speed of the TFT substrate is kept at 1.1 m / min, the voltage of magnetron sputtering equipment is 335Pa-345Pa and the power of the magnetron sputtering equipment is 2500W-3500W; the beneficial effects are that magnetron sputtering technology is adopted for coating the film on the substrate, the film layer has the anti-static effect without influencing the touch effect by controlling related parameters in the magnetron sputtering process, the overall technological method is simple, the manufacturing cost is low, the productivity is large, the film layer performance is stable, the film layer thickness is small, and the touch screen can be better developed towards the lightening and thinning direction.

Description

technical field [0001] The invention relates to the technical field of touch display screens, in particular to a method for manufacturing an antistatic touch display integrated screen. Background technique [0002] At present, electronic products tend to be thinner and lighter, and the requirements for thinner and lighter touch screens are getting higher and higher. The structure of the existing conventional TFT touch screen is to make the touch layer on the surface of the TFT-LCD substrate, and then add a cover plate, the thickness is still difficult to meet the current increasingly light and thin requirements. In order to cater to the development trend of thinner and thinner touch screens, the new IN-CELL TFT-LCD substrate has a touch layer inside the TFT-LCD substrate, so that the substrate has a display function and a touch function at the same time, so that the overall touch screen The thickness is greatly reduced, and the original external touch panel components are i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/086C23C14/35
Inventor 郑建军岳伟杨夫舜聂平
Owner WUHU TOKEN SCI