Manufacturing method of anti-static touch display integrated screen
A manufacturing method and touch display technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve problems such as interference, and achieve the effects of low manufacturing cost, large production capacity, and small film thickness
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0025] 1. Provide a TFT substrate with a surface resistance of 1E+7Ω / square, wash the TFT with pure water and lye in sequence, then perform two-fluid spray, ultrapure water spray and high-pressure spray in sequence, and finally pass through cold air in sequence Dry with hot air, check that the surface of the TFT substrate is clean, and set aside;
[0026] 2. Put the clean and dry TFT substrate on the sample holder of the magnetron sputtering chamber, evacuate the magnetron sputtering chamber to 0.25Pa, and heat the TFT substrate to 65°C within 500 seconds, and keep The temperature of the TFT substrate is kept constant, oxygen and argon are fed in, the flow rate of oxygen is 10sccm, the flow rate of argon is 700sccm, the running speed of the TFT substrate is 1.1m / min, and the magnetron sputtering coating starts at a voltage of 335V and a power of 2500W. , coating for 120 seconds, and preparing a sensing layer on the TFT substrate. The material of the sensing layer is indium ti...
Embodiment 2
[0029] 1. Provide a TFT substrate with a surface resistance of 1E+10Ω / square, wash the TFT with pure water and lye in sequence, then perform two-fluid spray, ultrapure water spray and high-pressure spray in sequence, and finally pass through cold air in sequence Dry with hot air, check that the surface of the TFT substrate is clean, and set aside;
[0030] 2. Put the clean and dry TFT substrate on the sample holder of the magnetron sputtering chamber, evacuate the magnetron sputtering chamber to 0.35Pa, and heat the TFT substrate to 55°C within 450 seconds, and keep The temperature of the TFT substrate is kept constant, oxygen and argon are fed in, the flow rate of oxygen is 10sccm, the flow rate of argon is 700sccm, the running speed of the TFT substrate is 1.1m / min, and the magnetron sputtering coating starts at a voltage of 345V and a power of 3500W. , coating for 140 seconds, and preparing a sensing layer on the TFT substrate. The material of the sensing layer is indium t...
Embodiment 3
[0033] 1. Provide a TFT substrate with a surface resistance of 1E+8Ω / square, wash the TFT with pure water and lye in sequence, then perform two-fluid spray, ultrapure water spray and high-pressure spray in sequence, and finally pass through cold air in sequence Dry with hot air, check that the surface of the TFT substrate is clean, and set aside;
[0034]2. Put the clean and dry TFT substrate on the sample holder of the magnetron sputtering chamber, evacuate the magnetron sputtering chamber to 0.3Pa, and heat the TFT substrate to 60°C within 480 seconds, and keep The temperature of the TFT substrate is kept constant, oxygen and argon are fed in, the flow rate of oxygen is 10sccm, the flow rate of argon is 700sccm, the running speed of the TFT substrate is 1.1m / min, and the magnetron sputtering coating starts at a voltage of 340V and a power of 3000W. , coating for 100 seconds, and preparing a sensing layer on the TFT substrate. The material of the sensing layer is indium tin ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| adhesivity | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| hardness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More