A method of manufacturing an antistatic touch display integrated screen

A technology of touch display and manufacturing method, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as interference, and achieve the effects of low manufacturing cost, large production capacity, and simple process method

Active Publication Date: 2021-09-07
WUHU TOKEN SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above technical problems, the present invention provides a method for manufacturing an antistatic touch display integrated screen, which mainly solves the problem of static electricity that will affect the TFT substrate embedded with the touch layer in the process of module segment processing and subsequent use. The problem of use is to coat a layer of anti-static film on the TFT substrate with embedded touch layer by using magnetron sputtering technology, and control the vacuum degree, substrate temperature, substrate running speed and The sputtering voltage and power make the film layer anti-static without affecting the touch effect of the touch screen and play the role of preventing signal interference. Moreover, the overall process method is simple, the manufacturing cost is low, the production capacity is large, and the film produced Layer performance is more stable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1, there is provided a surface resistance of 1E + 7Ω / square TFT substrate successively with water and lye washing the TFT, then a two-fluid spray is sequentially performed, with ultrapure water and high-pressure spray shower, sequentially passes through the final cold and hot air drying, inspection of the TFT substrate surface cleaning, standby;

[0026] 2, the clean, dry TFT substrate into the sample holder of the sputtering chambers, the sputtering chamber was evacuated to 0.25 Pa, and is heated within 500 seconds to the TFT substrate 65 ℃, and maintained TFT substrate temperature, oxygen and argon, into the flow rate of oxygen is 10 sccm, argon flow rate was 700 seem, the operating speed of the TFT substrate is 1.1m / min, at a voltage of 335V, the power of 2500W magnetron sputtering start , coating 120 seconds, the sensing layer prepared on the TFT substrate. Sensing layer material is indium tin oxide.

[0027] After testing, the surface resistance of the sensing laye...

Embodiment 2

[0029] 1, there is provided a surface resistance of 1E + 10Ω / square TFT substrate successively with water and lye washing the TFT, then a two-fluid spray is sequentially performed, with ultrapure water and high-pressure spray shower, sequentially passes through the final cold and hot air drying, inspection of the TFT substrate surface cleaning, standby;

[0030] 2, the clean, dry TFT substrate into the sample holder of the sputtering chambers, the sputtering chamber was evacuated to 0.35 Pa at, 450 seconds and the TFT substrate is heated to 55 ℃, and maintained TFT substrate temperature, oxygen and argon, into the flow rate of oxygen is 10 sccm, argon flow rate was 700 seem, the operating speed of the TFT substrate is 1.1m / min, at a voltage of 345V, a power of 3500W at the start magnetron sputtering , film 140 seconds, the sensing layer prepared on the TFT substrate. Sensing layer material is indium tin oxide.

[0031] After testing, the surface resistance sensing layer 8E + 9...

Embodiment 3

[0033] 1, there is provided a surface resistivity of 1E + 8Ω / square TFT substrate successively with water and lye washing the TFT, then a two-fluid spray is sequentially performed, with ultrapure water and high-pressure spray shower, sequentially passes through the final cold and hot air drying, inspection of the TFT substrate surface cleaning, standby;

[0034]2, put clean, dry TFT substrate into the sample frame of the magnetron sputter chamber, vacuum to 0.3 Pa, and heated to 60 ° C in 480 seconds, and maintainedThe TFT substrate is constant temperature, the flow rate of oxygen and argon, the flow rate of oxygen is 10sccm, the flow rate of argon is 700 sccm, and the operating speed of the TFT substrate is 1.1 m / min, and the voltage is 340V, the power is 3000W, the magnetron sputter coating is started.For 100 seconds, the plating film is prepared on the TFT substrate.The material of the induction layer is indium tin oxide.

[0035] After testing, the surface resistance of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
adhesivityaaaaaaaaaa
thicknessaaaaaaaaaa
hardnessaaaaaaaaaa
Login to view more

Abstract

A method for manufacturing an antistatic touch display integrated screen belongs to the technical field of touch display screens. The steps of the manufacturing method include: cleaning a TFT substrate, placing the TFT substrate on a sample holder of a magnetron sputtering chamber, and maintaining the magnetron The vacuum degree of the sputtering chamber is 0.25Pa ~ 0.35Pa, the TFT substrate is heated to 55°C ~ 65°C, oxygen and argon are introduced, the running speed of the TFT substrate is kept at 1.1m / min, and the voltage of the magnetron sputtering equipment is 335Pa~345Pa, and the power is 2500W~3500W, the beneficial effect of the present invention is that the magnetron sputtering technology is used to coat the substrate. At the same time, it does not affect the touch effect, the overall process method is simple, the manufacturing cost is low, the production capacity is large, the film layer performance is stable, and the film layer thickness is small, which is more conducive to the development of the touch screen in the direction of thinner and lighter.

Description

Technical field [0001] The present invention relates to a touch screen technology, and particularly relates to a method for producing integrally An antistatic screen touch display. Background technique [0002] At present, electronic products, light and thin to the trend, rising for the touch screen light and thin requirements. Conventional TFT structure of a conventional touch screen, the touch is made on the surface layer TFT-LCD substrate, and then cover with a layer, the thickness is still difficult to meet the present requirements of increasingly thinner. In order to meet the touchscreen light development trend, new TFT-LCD substrate will touch IN-CELL inner layers do TFT-LCD substrate, while the substrate provided with a display function includes a touch action, a touch screen so that the whole greatly reduced thickness, the original external touch panel liquid crystal panel member integration, to achieve the panel thickness and weight. This layer is embedded in the touch I...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/086C23C14/35
Inventor 郑建军岳伟杨夫舜聂平
Owner WUHU TOKEN SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap