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Storage and calculation integrated all-ferroelectric field effect transistor

An electric field effect and transistor technology, applied in the field of all-iron electric field effect transistors, to achieve the effect of solving compatibility and high integration

Active Publication Date: 2019-12-03
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In existing ferroelectric field effect transistors, there are still some problems due to the compatibility of ferroelectric devices with standard CMOS processes, which leads to large-scale integration of ferroelectric field effect transistors

Method used

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  • Storage and calculation integrated all-ferroelectric field effect transistor
  • Storage and calculation integrated all-ferroelectric field effect transistor
  • Storage and calculation integrated all-ferroelectric field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0044] The schematic diagram of the cross-sectional structure of the all-ferroelectric field-effect transistor integrating storage and computing provided in this embodiment is as follows figure 1 As shown, it mainly includes a substrate 10 , a source electrode 20 and a drain electrode 30 , a gate electrode 40 isolated from the source and drain electrodes, and a ferroelectric bump 50 . Wherein the substrate 10 is made of a ferroelectric material with domain wall conductivity. In this embodiment, a substrate 60 is further disposed under the base 10 . The source electrode 20, the drain electrode 30 and the ferroelectric bump 50 can form a non-volatile ferroelectric memory; the source electrode 20 and the drain electrode 30, the gate electrode 40 isolated from the source and drain electrodes, and the ferroelectric bump 50 can form a field effect transistor , so as to realize the integration of storage and calculation.

[0045] The polarization direction of the electric domain in t...

no. 2 example

[0055] refer to Figure 4 As shown, the structure of this embodiment is basically the same as that of the first embodiment, except that the gate electrode layer 40 is located under the substrate 10 to form a back gate electrode.

[0056] It should be noted that the ferroelectric domain between the gate electrode and the source-drain electrode of the all-ferroelectric field-effect transistor based on this architecture will not be reversed as the gate voltage changes.

no. 3 example

[0058] refer to Figure 5 As shown, the structure of this embodiment is basically the same as that of the second embodiment, except that the substrate 60 is a heavily doped P-type or N-type silicon wafer, which can be used as a back gate electrode. This embodiment simplifies the process and does not require a back gate electrode.

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Abstract

The invention relates to a storage and calculation integrated all-ferroelectric field effect transistor. The storage and calculation integrated all-ferroelectric field effect transistor comprises a substrate, a source electrode, a drain electrode, a gate electrode and ferroelectric bumps, the source electrode and the drain electrode are arranged on the substrate in an isolated manner through the ferroelectric bumps, the gate electrode, the source electrode and the drain electrode are arranged in an isolated manner, and the substrate is made of a ferroelectric material with domain wall conductivity. Compared with the prior art, the problem of high integration of the ferroelectric is fundamentally solved.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage and the field of field effect transistor logic circuits, and in particular relates to an all-ferroelectric field effect transistor integrating storage and calculation. Background technique [0002] The integration of ferroelectrics is mainly to integrate ferroelectric thin film materials and semiconductor materials together to form devices with one or some specific functions, which are widely used in ferroelectric storage devices, optoelectronic devices, ultrasonic and surface acoustic wave devices, Infrared detection and imaging devices. [0003] In the 1960s and 1970s, due to the influence of the thin film integration process of microelectronic devices, ferroelectric thin films for memory were developed. However, there were compatibility issues between ferroelectric thin films and semiconductor processes. Until the mid-1980s, with the development of silicon integration technology,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L27/11585H10B51/00
CPCH01L29/78391H01L29/6684H10B51/00
Inventor 江安全柴晓杰汪超江钧张焱
Owner FUDAN UNIV