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Semiconductor structure and forming method thereof, and image sensor and forming method thereof

An image sensor and semiconductor technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as performance needs to be further improved, and achieve the effect of reducing impact and improving imaging quality

Inactive Publication Date: 2019-12-06
HUAIAN IMAGING DEVICE MFGR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the performance of existing stacked image sensors needs to be further improved

Method used

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  • Semiconductor structure and forming method thereof, and image sensor and forming method thereof
  • Semiconductor structure and forming method thereof, and image sensor and forming method thereof
  • Semiconductor structure and forming method thereof, and image sensor and forming method thereof

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Embodiment Construction

[0038] As mentioned in the background, existing image sensors have poor performance.

[0039] The reasons for the poor performance of the image sensor are described in detail below in conjunction with the accompanying drawings. figure 1 It is a schematic diagram of the structure of an image sensor.

[0040] Please refer to figure 1 , an image sensor includes: a first substrate 110, the first substrate 110 includes an opposite first surface 101 and a second surface 102, the first substrate 110 has a photoelectric doped region 111; located on the second surface 102 The first dielectric layer 112 on the surface; the first metal layer 113 located in the first dielectric layer 112; the second substrate 120, the second substrate 120 includes opposite third surfaces 121 and fourth surfaces 122, and the first The three sides 121 are bonded towards the second side 102; the second dielectric layer 130 on the surface of the third side 121; the second substrate 120 and the second dielec...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and an image sensor and a forming method thereof, and the image sensor comprises a first substrate which comprises a plurality of pixel regions which are separated from each other; a first dielectric layer which is positioned on the surface of the first substrate and comprises a first surface and a second surface whichare opposite to each other, wherein the first surface is in contact with the surface of the first substrate; a second substrate; a second dielectric layer which is located on the surface of the second substrate, wherein the second dielectric layer comprises a third surface and a fourth surface which are opposite to each other, wherein the third surface is bonded towards the second surface; logicdevices located in the second substrate and the second dielectric layer; a first absorption layer which is located between the first substrate and the second substrate, wherein the first absorption layer is located on the whole first substrate. According to the image sensor, the influence of white pixels can be effectively reduced, so that the performance of the image sensor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and its forming method, an image sensor and its forming method. Background technique [0002] Image sensors may be used to sense radiation, such as optical radiation, including but not limited to visible light, infrared, ultraviolet, and the like. Image sensors are classified into back-illuminated (BSI) image sensors and front-illuminated (FSI) image sensors according to the way they receive radiation. [0003] Backside-illuminated image sensors are capable of receiving radiation from their backside. Different from the front-illuminated image sensor, in the back-illuminated image sensor, wiring and other components that may affect radiation reception are basically located on the front side of the substrate, while light enters from the back side of the substrate. In this way, the incident light can be incident on the photodiode witho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14623H01L27/14685
Inventor 方欣欣夏春秋李春杰方明旭
Owner HUAIAN IMAGING DEVICE MFGR CORP
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