Prevent metal loss with injection

Abstract

The present invention provides methods for forming conductive features in dielectric layers without the use of adhesive layers or barrier layers, and devices formed therefrom. In some embodiments, a structure includes a dielectric layer overlying a substrate and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface close to the substrate and a top surface far away from the substrate. The conductive component is in direct contact with the dielectric layer, and the dielectric layer includes an implanted species. The concentration of the implanted species in the dielectric layer has a peak concentration near the top surface of the dielectric layer, and the concentration of the implanted species decreases from the peak concentration in a direction toward the lower surface of the dielectric layer. Embodiments of the invention also relate to the use of implants to prevent metal loss.

Description

Technical field [0001] Embodiments of the invention relate to the use of injection to prevent metal loss. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone an exponential growth. IC materials and technological advances in the design produced generations of IC, wherein each generation than the previous generation having a smaller and more complex circuits. During IC evolution, functional density (e.g., the number of interconnected devices per chip area) has generally increased, while the geometry (e.g., a manufacturing process can be used to create the smallest member (or wire)) has been reduced. This scaling down process generally provides benefits by increasing production efficiency and reducing the associated costs. [0003] With the scaling down, manufacturers have started using a new combination of different materials and / or material of the device to facilitate the scaled down device. Narrow the scope of a separate and new and di...

AI Technical Summary

Problems solved by technology

Downsizing alone and in combination with new and different materials also presents challenges that may not have been posed at the larger geometries of the previous generation

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