Driving IC circuit of intelligent power module, intelligent power module and air conditioner

Abstract

The invention discloses a driving IC circuit of an intelligent power module, an intelligent power module and an air conditioner. The driving IC circuit includes a driving voltage input terminal, a first motor driving circuit, a second motor driving circuit, a PFC driving circuit, and a booster circuit, wherein the first motor driving circuit drives the operation of an upper bridge arm switching transistor and a lower bridge arm switching transistor corresponding to an external first motor; the second motor driving circuit drives the operation of an upper bridge arm switching transistor and a lower bridge arm switching transistor corresponding to an external second motor; the PFC driving circuit drives the operation of an external PFC switching transistor; the driving voltage input terminalprovides a drive input voltage for the first motor driving circuit and an input voltage for the booster circuit; the booster circuit boosts the input voltage and provides a driving input voltage forthe second motor driving circuit and the PFC driving circuit. The driving IC circuit improves the integration degree of the intelligent power module, and can simultaneously drive Si-based power switching devices and SiC-based power switching devices.

Description

technical field [0001] The invention relates to the field of intelligent power modules, in particular to a driving IC circuit of the intelligent power module, the intelligent power module and an air conditioner. Background technique [0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switching device and the high-voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives the control signal from the MCU to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasing market due to their advantages of high integration and high reliability. They are especia...

AI Technical Summary

Problems solved by technology

However, SiC-based power switching devices (such as SiC-based MOSFET tubes) are more suitable for working at a driving voltage of 18-20V, which leads to the fact that the driver ICs of Si-based power switching devices in existing smart power modules (also known as smart power module drivers) IC) are not suitable for directly driving SiC-based power switching devices

Moreover, in most cases, there may be both SiC-based power switching devices and Si-based power switching devices in smart power modules. For example, PFC switches in smart power modules generally use SiC-based power switching devices to replace the original Si-based power switches. Devices to improve the power correction factor, thereby improving power utilization, while the inverter devices in the intelligent power module (that is, the upper-side switch tube and the lower-side switch tube) still use Si-based power switching devices, if both use the same If the driving voltage of the Si-based power switching device is low, the performance of the SiC-based power switching device may not be fully utilized.

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