Polarization-independent power divider based on symmetric three-waveguide and sub-wavelength structure
A technology of power divider and sub-wavelength structure, applied in the field of integrated optics, can solve the problems of high insertion loss and reflection loss, negative impact on PIC performance, high design complexity and power distribution ratio, etc., to avoid bending the output waveguide, The effect of high coupling efficiency and reduced insertion loss
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[0044] A polarization-independent silicon-based power splitter based on symmetrical three-waveguides and subwavelength structures (such as figure 1 , figure 2 As shown), the power divider is manufactured using an insulating silicon wafer platform. The bottom layer of the power divider is a silicon-based substrate 8 composed of a standard 6-inch silicon wafer. The upper surface of the silicon-based substrate 8 has a 2 μm thick buried The oxide layer 9 is made of silicon dioxide material, and a silicon waveguide layer 11 is distributed on the upper surface of the buried oxide layer 9, and the silicon waveguide layer 11 is covered with an upper cladding layer 10 composed of silicon dioxide, wherein:
[0045] The silicon waveguide layer 11 includes an input channel 1, a right through channel 2, a middle through channel 3, a left through channel 4, a right output channel 5, a left output channel 6, a symmetrical three-waveguide directional coupler structure 7, and the materials of...
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