Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer surface particle cleaning device

A technology for surface particles and cleaning devices, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reduced line width, increased aspect ratio, and increased cleaning process difficulty, and achieves efficient cleaning and damage. small effect

Active Publication Date: 2019-12-27
SHENYANG KINGSEMI CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the object of the present invention is to provide a wafer surface particle cleaning device to solve the problems of wafer surface with pattern structure, line width reduction, aspect ratio increase, and cleaning process difficulty increase

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer surface particle cleaning device
  • Wafer surface particle cleaning device
  • Wafer surface particle cleaning device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] Such as Figure 1-2 As shown, a wafer surface particle cleaning device includes a two-fluid nozzle 4 and a two-fluid nozzle control system 1 connected to the two-fluid nozzle 4 and a two-fluid nozzle moving system 6, and the two-fluid nozzle 4 is provided with a liquid channel 45 and Surrounding the outside of the liquid channel 45, the ring cavity 47 used for the passage of the inert gas, the liquid and the inert gas ejected from the liquid channel 45 and the ring cavity 47 are mixed outside the two-fluid nozzle 4, and the liquid is atomized to the crystal The surface of the circle 5 is cleaned; the two-fluid nozzle control system 1 is used to control the injection performance of the two-fluid nozzle 4 to spray liquid and gas; the two-flui...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of wafer cleaning and particularly relates to a wafer surface particle cleaning device. The device comprises a two-fluid nozzle, and a two-fluid nozzle control system and a two-fluid nozzle moving system which are connected with the two-fluid nozzle. The device is characterized in that the two-fluid nozzle is provided with a liquid channel and an annular cavity surrounding the outer side of the liquid channel and used for permitting inert gas to pass through, the liquid and the inert gas respectively sprayed out of the liquid channel and the annularcavity are mixed outside the two-fluid nozzle, a surface of a wafer is cleaned after the liquid is atomized; the two-fluid nozzle control system is used for controlling spraying performance of the two-fluid nozzle for spraying the liquid and the gas, and the two-fluid nozzle moving system is used for controlling movement of the two-fluid nozzle. The two-fluid nozzle is adopted, through reasonablecontrol over the gas pressure and the liquid flow, purposes that damage to the wafer is small, and the wafer can be efficiently cleaned are achieved.

Description

technical field [0001] The invention belongs to the technical field of wafer cleaning, in particular to a wafer surface particle cleaning device. [0002] technical background [0003] In the field of chip manufacturing, from below 90 nanometers, the yield rate of chip manufacturing has begun to decline. One of the main reasons is that the particle pollution on the silicon wafer is difficult to clean. As the wire becomes thinner and thinner, below 45 nanometers, basically in the entire process, cleaning is required every two steps. If you want to obtain a higher yield rate, almost every step of the process is inseparable from cleaning. As the semiconductor process moves from 2D to 3D, silicon wafer cleaning poses new challenges. Compared with the cleaning of flat surfaces, the technology and requirements of wafer cleaning with pattern structure are much more complicated. As the line width decreases and the aspect ratio increases, the difficulty of the cleaning process increa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02057H01L21/0209H01L21/67051
Inventor 苗涛彭博
Owner SHENYANG KINGSEMI CO LTD