Semiconductor structure and manufacturing method thereof

Abstract

The present invention provides a manufacturing method of a semiconductor structure and a semiconductor structure. Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includesforming a source / drain structure in an active area on a substrate, the source / drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source / drain structure to form an amorphous region in at least the first region of the source / drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source / drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Description

technical field [0001] The present disclosure relates to semiconductor fabrication technology, and in particular, to source / drain structures and fabrication methods thereof. Background technique [0002] As the semiconductor industry has progressed to the nanotechnology process node (node) in pursuit of higher device density, higher efficiency and lower cost, challenges from both manufacturing and design have led to the development of three-dimensional designs, such as fin Field Effect Transistors (Fin Field Effect Transistors, FinFETs). FinFET devices generally include semiconductor fins with high aspect ratios, and channels and source / drain regions are formed in these semiconductor fins. Gates are formed above and along the sides of the fin structures (eg, wrapping), which takes advantage of increased channel surface area to produce faster, more reliable, and better-controlled semiconductor transistor devices. [0003] FinFET devices typically include semiconductor regio...

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