Semiconductor device

A semiconductor and non-conduction technology, applied in the fields of semiconductor devices and power conversion devices, to achieve the effects of low conduction loss, improved trade-off relationship, and improved controllability

Active Publication Date: 2020-01-10
HITACHI POWER SEMICON DEVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, the switching loss includes the turn-on loss and turn-off loss fr

Method used

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  • Semiconductor device
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Examples

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Embodiment 1

[0050] refer to Figure 1 to Figure 5 Next, an insulated gate type (gate control type) semiconductor device (IGBT) 100 according to the first embodiment of the present invention will be described. figure 1 It is a partial sectional view of IGBT100 of this Example.

[0051] This example figure 1 As shown, an IGBT having a trench gate shape and two independently controllable gates (GS, GC) has a p-type well layer 2 adjacent to the n-type drift layer 1 in the vertical direction, and The side opposite to the p-type well layer 2 is the p-type collector layer 4 adjacent to the n-type drift layer 1 in the longitudinal direction. Furthermore, on the upper part of the p-type well layer 2, the p-type power supply layer 12 and the n-type emitter layer 3 are adjacently present. Furthermore, these p-type well layer 2 and n-type emitter layer 3 are connected to a trench gate type first insulating gate (GS gate) 6 having a gate electrode and a gate insulating film (gate oxide film) 5 vi...

Embodiment 2

[0067] refer to Figure 6A as well as Figure 6B Next, an insulated gate type (gate control type) semiconductor device (IGBT) 200 according to a second embodiment of the present invention will be described. Figure 6A is a partial sectional view of the IGBT of this embodiment, and additionally Figure 6B is a plane configuration diagram of the IGBT of this embodiment, Figure 6B The section of the A-A' part in the Figure 6A corresponding to the sectional view.

[0068] This embodiment is an IGBT having a trench gate shape and having two independently controllable gates, and includes a p-type well layer 2 adjacent to the n-type drift layer 1 in the vertical direction, and a p-type well layer 2 adjacent to the p-type drift layer 2 The opposite side is the p-type collector layer 4 adjacent to the n-type drift layer 1 in the longitudinal direction. Furthermore, on the upper part of the p-type well layer 2, the p-type power supply layer 12 and the n-type emitter layer 3 are a...

Embodiment 3

[0076] refer to Figure 8 to Figure 9B Next, an insulated gate type (gate control type) semiconductor device (IGBT) 300 according to a third embodiment of the present invention will be described. Figure 8 It is a sectional view of IGBT300 of this Example.

[0077] This embodiment relates to a side gate shape in which the gate electrode is arranged only on the sidewall of the trench, and is an IGBT having two independently controllable gates. A p-type well layer 2 vertically adjacent to the n-type drift layer 1 is provided, and a p-type collector layer 4 vertically adjacent to the n-type drift layer 1 on the side opposite to the p-type well layer 2 . Furthermore, on the upper part of the p-type well layer 2, the p-type power supply layer 12 and the n-type emitter layer 3 are adjacently present. Furthermore, these p-type well layer 2 and n-type emitter layer 3 are connected to a side-gate-type first insulating gate (GS gate) 6 having a gate electrode and a side gate through ...

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Abstract

The present invention provides: an IGBT that achieves both low conduction loss and low switching loss; and a power conversion device to which the IGBT is applied. The present invention is characterized by being provided with: a semiconductor substrate; a semiconductor layer of a first conductivity type; a well region of a second conductivity type; a first gate electrode and a second gate electrodewhich are in contact with the semiconductor layer and the well region through a gate insulating film and are formed adjacent to each other with the well region interposed therebetween; an emitter region of the first conductivity type; a feed region of the second conductivity type; an emitter electrode; a collector layer of the second conductivity type; and a collector electrode, wherein an interval between the first gate electrode and the second gate electrode is narrower than a distance to another gate electrodes adjacent thereto, the first gate electrode and the second gate electrode each is electrically connected to either of a switching gate wiring or a carrier control gate wiring, and the number of gate electrodes connected to the carrier control gate wiring is greater than the number of gate electrodes connected to the switching gate wiring.

Description

technical field [0001] The present invention relates to a semiconductor device and a power conversion device using the semiconductor device, and particularly relates to a technology effective for reducing power loss of IGBTs and improving the efficiency of the power conversion device. Background technique [0002] Global warming has become an important and urgent issue common to the whole world, and as one of the countermeasures, expectations for the contribution of power electronics technology are rising. In particular, in order to increase the efficiency of the inverter that performs the power conversion function, it is required to use the IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) that functions as a power switch and the diode that functions as a rectifier as components of the inverter. Low power consumption of main power semiconductor devices. [0003] Figure 20 A partial circuit diagram of a conventional inverter is shown. For the IGB...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/12H01L29/78
CPCH01L29/7397H01L29/7831H01L29/0696H01L29/4238H01L29/1608H02M1/08H02M7/5387Y02B70/10H02M1/0051
Inventor 三好智之森睦宏竹内悠次郎古川智康
Owner HITACHI POWER SEMICON DEVICE
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