Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for optimizing flash memory medium and non-volatile storage device

An optimization method and medium technology, applied in memory systems, memory address/allocation/relocation, instruments, etc., can solve problems such as read errors, data loss, physical block performance degradation, etc., to improve the accuracy rate and optimize performance. Effect

Active Publication Date: 2021-11-09
SHENZHEN DAPU MICROELECTRONICS CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, for flash media in any stage of use, when performing read and write operations, it directly reads and writes the physical blocks in the target area according to the operation instructions and the basic performance parameters of the physical blocks. In a certain area, the bit inversion of the block area, or, with the increase of the number of erase / write operations, the medium characteristics of the flash medium change, may lead to the performance degradation of the physical block in the flash medium, resulting in data loss or read mistake

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for optimizing flash memory medium and non-volatile storage device
  • Method for optimizing flash memory medium and non-volatile storage device
  • Method for optimizing flash memory medium and non-volatile storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0081] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0082] In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0083] see Figure 1 to Figure 3 , the non-volatile storage device 100 includes a flash memory medium 10 and a main controller ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of data storage, and discloses a method for optimizing a flash memory medium and a nonvolatile storage device. Wherein, the flash memory medium includes several physical blocks, and the method for optimizing the flash memory medium includes: selecting a physical block of a first proportion from the several physical blocks as a reference physical block; performing a preset number of erase / write operations on the reference physical block Operation: Acquiring reference performance parameters of reference physical blocks after performing a preset number of erase / write operations; adjusting performance parameters of remaining physical blocks according to the reference performance parameters. The embodiment of the present invention can optimize the performance of the remaining physical blocks, and improve the accuracy rate of data reading and writing of the remaining physical blocks.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a method for optimizing a flash memory medium and a nonvolatile storage device. Background technique [0002] With the development and wide application of technologies such as the Internet, cloud computing, and the Internet of Things, in human activities, it is inevitable to generate massive data that needs to be processed and stored, thus putting forward higher requirements for storage systems. Flash memory media is used as a carrier for storing data. , whose performance affects the use of storage devices or storage systems. [0003] At present, for flash media in any stage of use, when performing read and write operations, it directly reads and writes the physical blocks in the target area according to the operation instructions and the basic performance parameters of the physical blocks, but due to long-term reading and writing or non-use In a certain area, the bit inversion of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246
Inventor 陈祥李卫军
Owner SHENZHEN DAPU MICROELECTRONICS CO LTD