Epitaxial growth method of metal gallium nitride composite substrate and light emitting diode epitaxial structure
A composite substrate, epitaxial growth technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as poor quality of epitaxial structures, and achieve the effects of improving appearance, facilitating stress release, and improving crystal quality
Active Publication Date: 2020-01-17
宁波安芯美半导体有限公司
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Problems solved by technology
[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a metal gallium nitride composite substrate epitaxial growth method and a light-emitting diode epitaxial structure, which are used to solve the problem of epitaxial growth caused by the warping of the light-emitting diode substrate in the prior art. Technical issues with poor structural quality
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[0021] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. At the same time, terms such as "upper", "lower", "front", "rear", "left", "right", and "middle" quoted in this specification are only for the convenience of description and are not intended to be used. To limit the practicable scope of the present invention, the change or adjustment of the relative relationship shall also be regarded as the practicable scope of the present invention without substantially changing the technical content. ...
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Abstract
The invention provides an epitaxial growth method of a metal gallium nitride composite substrate. The growth method comprises the following steps: providing a metal gallium nitride composite substrate, forming a low-temperature stress layer on the metal gallium nitride composite substrate, forming a first semiconductor layer on the low-temperature stress layer, forming an active region quantum well layer on the first semiconductor layer, and forming a second semiconductor layer on the active region quantum well layer, wherein annealing treatment is carried out on the substrate at the growth temperature of 700-750 DEG C, and the low-temperature stress layer grows at the growth temperature of 700-850 DEG C. By utilizing the method, the problem of large warping of the substrate can be effectively reduced, stress release is facilitated, the appearance of the epitaxial layer of the substrate is remarkably improved, the phenomena of bubbling, peeling and cracking of the epitaxial layer are reduced, and the crystal quality is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal gallium nitride composite substrate epitaxial growth method and a light emitting diode epitaxial structure. Background technique [0002] Today, although light-emitting diodes (LEDs) are being gradually used in road lighting, office lighting, home lighting, industrial lighting, agricultural lighting and other fields due to their long life, low power consumption, high luminous efficiency, easy control and environmental protection. , won a wide market. However, the market's requirements for the brightness of light-emitting diodes are also getting higher and higher, and the brightness of traditional light-emitting diodes obviously cannot meet the needs of many occasions. There is a phenomenon of thermal mismatch during the epitaxial growth process of the substrate. The surface of the epitaxial growth layer is prone to bubbling and peeling, and the warping is serious....
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IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0075H01L33/0095H01L33/325
Inventor 郭丽彬唐军
Owner 宁波安芯美半导体有限公司