Epitaxial Growth Method of Metal Gallium Nitride Composite Substrate and Epitaxial Structure of Light Emitting Diode
A composite substrate, epitaxial growth technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor quality of epitaxial structures, and achieve the effect of improving appearance, improving crystal quality, and facilitating stress release
Active Publication Date: 2021-06-18
宁波安芯美半导体有限公司
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Problems solved by technology
[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a metal gallium nitride composite substrate epitaxial growth method and a light-emitting diode epitaxial structure, which are used to solve the problem of epitaxial growth caused by the warping of the light-emitting diode substrate in the prior art. Technical issues with poor structural quality
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[0021] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. At the same time, terms such as "upper", "lower", "front", "rear", "left", "right", and "middle" quoted in this specification are only for the convenience of description and are not intended to be used. To limit the practicable scope of the present invention, the change or adjustment of the relative relationship shall also be regarded as the practicable scope of the present invention without substantially changing the technical content. ...
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Abstract
The invention provides a method for epitaxial growth of a metal gallium nitride composite substrate. The growth method includes providing a metal gallium nitride composite substrate, forming a low-temperature stress layer on the metal gallium nitride composite substrate, and A first semiconductor layer is formed on the low temperature stress layer, an active region quantum well layer is formed on the first semiconductor layer, and a second semiconductor layer is formed on the active region quantum well layer, wherein the substrate The annealing treatment is performed at a growth temperature between 700°C and 750°C, and the low temperature stress layer is grown at a growth temperature between 700°C and 850°C. The present invention can effectively reduce the large warpage of the substrate, be more conducive to the release of stress, remarkably improve the appearance of the epitaxial layer of the substrate, reduce the phenomena of bubbling, peeling and cracks in the epitaxial layer, and improve the crystal quality.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal gallium nitride composite substrate epitaxial growth method and a light emitting diode epitaxial structure. Background technique [0002] Today, although light-emitting diodes (LEDs) are being gradually used in road lighting, office lighting, home lighting, industrial lighting, agricultural lighting and other fields due to their long life, low power consumption, high luminous efficiency, easy control and environmental protection. , won a wide market. However, the market's requirements for the brightness of light-emitting diodes are also getting higher and higher, and the brightness of traditional light-emitting diodes obviously cannot meet the needs of many occasions. There is a phenomenon of thermal mismatch during the epitaxial growth process of the substrate. The surface of the epitaxial growth layer is prone to bubbling and peeling, and the warping is serious....
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IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0075H01L33/0095H01L33/325
Inventor 郭丽彬唐军
Owner 宁波安芯美半导体有限公司