Coaxial high-frequency high-power microwave device

A high-power microwave and coaxial technology, applied to the circuit components of the time-of-flight electron tube, the coupling device of the time-of-flight electron tube, etc., can solve the problems of microwave output efficiency reduction, etc., and achieve easy assembly, simple structure size, The effect of improving microwave generation efficiency

Active Publication Date: 2020-01-21
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

Generally, the higher the frequency of the device, the lower its microwave output efficiency will be

Method used

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  • Coaxial high-frequency high-power microwave device

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Embodiment 1

[0028] Such as figure 1 As shown, a high-frequency high-power microwave device in this embodiment includes a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve. One end of the circular waveguide sleeve is provided with a cathode for emitting a circular electron beam. The inner diameter of the circular waveguide sleeve is 14.6 mm, and the diameter of the inner conductor is 10 mm.

[0029] The coaxial reflection area, beam pre-modulation area, phase modulation area and beam conversion area are arranged in sequence along the electron beam transmission direction, and the reflection area, beam pre-modulation area, phase modulation area and beam conversion area form a high-frequency structure; the reflection area , the beam pre-modulation area, the phase modulation area and the beam conversion area respectively set an annular groove-shaped cavity with a rectangular section on the corresponding position of the circular waveguide sleeve wall an...

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Abstract

The invention discloses a coaxial high-frequency high-power microwave device, which comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve. A high-frequency structure is arranged in the circular waveguide sleeve. The high-frequency structure is sequentially provided with a reflection region, a beam current pre-modulation region, a phase modulation region and a beam wave conversion region which are coaxial in the electron beam transmission direction. The reflection region, the beam pre-modulation region, the phase modulation region and the beam-wave conversion region are respectively provided with annular groove-shaped cavities at the corresponding positions of the sleeve wall of the circular waveguide sleeve and the inner conductor, and thecavities at the corresponding positions of the sleeve wall of the circular waveguide sleeve and the inner conductor form a reflection cavity, beam pre-modulation cavities a phase modulation cavity andbeam-wave conversion cavities. An annular collector protruding inwards in the radial direction is arranged behind the beam wave conversion region. An annular electron beam with the voltage of 400kV and the current of 9.0kA is transmitted in the microwave device under the guidance of an axial magnetic field with the magnetic field intensity of 1.2T, and 70GHz high-frequency high-power microwaves are generated. By adopting the coaxial high-frequency high-power microwave device, high-frequency high-power microwaves can be generated, and the microwave generation efficiency can be improved.

Description

technical field [0001] The invention relates to a coaxial high-frequency high-power microwave device and belongs to the technical field of high-power microwave devices. Background technique [0002] High-power microwave generally refers to electromagnetic waves with peak power above 100MW and operating frequency in the range of 1-300GHz. With the research and application requirements of high-power microwave technology, high-power microwave sources are gradually developing to high-frequency structures. [0003] The axial O-shaped high-power microwave device is a kind of high-power microwave device that is widely used due to the easy guidance of the electron beam brought by the structure and the variable combination of the structure. The increase in device frequency drastically reduces the radial size of the device, thereby causing a reduction in power capacity. This physical mechanism is a key problem that must be solved for high-frequency and high-power microwave devices. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/36H01J23/24
CPCH01J23/24H01J23/36
Inventor 丁恩燕张运俭
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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