Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory access system

A memory access and memory technology, applied in the field of memory access systems, can solve problems such as difficult to achieve highly reliable data verification codes, large data granularity, and large memory access delays, so as to improve usability, correct data errors, and improve The effect of bandwidth efficiency

Active Publication Date: 2020-01-24
JIANGNAN INST OF COMPUTING TECH
View PDF18 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Data verification requires stronger encoding, which requires greater data granularity. For example, ChipKill encoding that can correct errors in the entire particle requires a data granularity of 512+64 (512-bit data + 64-bit checksum). 64-bit memory controller can not do
On the other hand, in the field of high-performance computing, the data granularity available to the processor core is larger, such as issuing a memory access request of more than 128B, and if a 64-bit memory controller is used, multiple DDR4 accesses are required, which will lead to more large memory access latency
[0004] For this reason, conventional methods are difficult to achieve highly reliable data check coding

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory access system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The following are specific embodiments of the present invention and in conjunction with the accompanying drawings, the technical solutions of the present invention are further described, but the present invention is not limited to these embodiments.

[0029] like figure 1 , A storage access system of the present invention includes a storage controller and a storage. The memory is a 128-bit memory composed of two groups of storage particles (the total bit width is 144 bits including 16 parity bits), and each group of storage particles is 64 bits. In one embodiment, two groups of memory particles are concatenated to form a 128-bit memory; in another embodiment, two groups of memory particles are separately arranged to form a 128-bit memory. The memory is a DDR series memory, such as DDR3, DDR4 memory.

[0030] The storage controller includes a user interface, a first control channel CCH0, a second control channel CCH1, a first data channel DCH0, and a second data channe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memory access system, and belongs to the technical field of a computer architecture and processor microstructure design. The memory access system comprises a storage controller and a memory, wherein the memory is a 128-bit memory composed of two groups of storage particles, and each group of storage particles has 64 bits; the storage controller comprises a user interface,a first control path CCH0, a second control path CCH1, a first data path DCH0 and a second data path DCH1; the user interface is used for receiving an upper-layer memory access request and distributing the upper-layer memory access request to the first control path CCH0, the second control path CCH1, the first data path DCH0 and the second data path DCH1, and then is responsible for collecting response and returning; in the single-channel mode, the first control path CCH0 or the second control path CCH1 is used for managing the first data path DCH0 and the second data path DCH1 at the same time; and in the dual-channel mode, the first control path CCH0 and the second control path CCH1 manage the first data path DCH0 and the second data path DCH1 respectively. The memory access system canbe flexibly configured to support a high-reliability application scene and a high-bandwidth application scene.

Description

technical field [0001] The invention belongs to the technical field of computer architecture and processor microstructure design, and specifically relates to a memory access system. Background technique [0002] Storage controller is an important part of computer system. At present, the mainstream memory used in the field of high-performance computing is still the DDR (Double Data Rate) series memory, mainly the new generation of DDR4 memory. DDR series memories are usually spliced ​​into modules with a data bit width of 64 bits, such as UDIMM and RDIMM (if the parity is considered, it is 64+8=72 bits, unless otherwise specified, the subsequent bit width in this article only refers to the data bit width , not referring to the total bit width of the parity bit on the tape). The traditional 64-bit memory controller technology only controls one memory channel with a 64-bit data width, which is responsible for converting the upper-layer memory access request into a command tha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F3/06
CPCG06F3/0604G06F3/0658G06F3/0673
Inventor 高剑刚石嵩吕晖宁永波严忻恺吴铁彬刘骁
Owner JIANGNAN INST OF COMPUTING TECH
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More