Enhanced absorption type photoelectric detector and system based on boron-doped silicon quantum dots
A photodetector, photoelectric detection technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as absorptivity errors
Active Publication Date: 2020-01-24
YUNNAN NORMAL UNIV
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[0005] The object of the present invention is to provide a boron-doped silicon quantum dot-based photodetector and system for enhancing the absorption type in view of the deficiencies in the above-mentioned prior art, so as to solve the absorptivity of light in a part of the area of the device used in the prior art. , using a part of the absorption rate to represent the overall absorption rate has a large error
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[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.
[0025] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...
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The invention relates to an enhanced absorption type photoelectric detector and system based on boron-doped silicon quantum dots, and particularly relates to the field of photoelectric measurement. The photoelectric detector comprises a substrate, a graphene layer, a first boron-doped silicon quantum dot, a first electrode, a second electrode, a first isolation layer and a second isolation layer.When light hits the photoelectric detector, the graphene layer, the first boron-doped silicon quantum dot and the substrate absorb the light. A lot of holes are generated in the photoelectric detector, and the holes are captured by a defect state in the first boron-doped silicon quantum dot. Charges are rapidly extracted under the action of an electric field. Before minority carriers are released,the charges are equivalently circulated for multiple times in a loop, and then, a very high current is formed on the photoelectric detector. The light absorptivity of the photoelectric detector is obtained through the corresponding relation between the current and the light absorptivity of the photoelectric detector.
Description
technical field [0001] The invention relates to the field of photoelectric measurement, in particular to a boron-doped silicon quantum dot-based enhanced absorption photodetector and system. Background technique [0002] The absorptivity of light indicates the measure of the light intensity weakened when a monochromatic light passes through a solution or solid. In real life, all objects have a certain absorptivity. The absorption rate is closely related. [0003] In the prior art, the detection of the absorptivity of a device to light is generally by measuring the light intensity of the incident light, the light intensity of the outgoing light and the light intensity of the refracted light of the device under the condition of light, and the light intensity of the outgoing light is used. The light intensity of the incident light is subtracted from the sum of the light intensity of the refracted light and then compared with the light intensity of the incident light to calcula...
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IPC IPC(8): H01L31/09H01L31/0328
CPCH01L31/0328H01L31/09
Inventor 杨培志申开远杨雯马春阳莫镜辉
Owner YUNNAN NORMAL UNIV