Three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as poor consistency of epitaxial structures, and achieve the effect of improving consistency and reducing process difficulty

Active Publication Date: 2020-02-04
YANGTZE MEMORY TECH CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

However, with the development of three-dimensional memory technology, the number of ON (Oxide / Nitride) stacks in three-dimensional memory (such as 3D NAND) is increasing, and the consistency of the epitaxial structure at the bottom of the channel hole in three-dimensional memory is getting worse and worse.

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  • Three-dimensional memory and manufacturing method thereof
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  • Three-dimensional memory and manufacturing method thereof

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Embodiment Construction

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0044] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0045] As mentioned in the background section, with the development of ...

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Abstract

An embodiment of the application discloses a three-dimensional memory and a manufacturing method thereof, and the manufacturing method comprises the following steps of firstly forming a first sacrificial layer between a substrate and a stacked structure, removing the first sacrificial layer after forming a channel structure and a gate line gap structure in the stacked structure, and filling the epitaxial structure such that the epitaxial structure forms a region where the first sacrificial layer is located, that is, no longer forming the epitaxial structure at the bottom of the channel hole, while forming the epitaxial structure at the surface of the substrate and a portion of the sidewall region of the first conductive layer in the channel structure facing the storage layer side, so as toreduce the technical difficulty of the epitaxial structure and improve the consistency of the epitaxial structure on the basis of ensuring that the epitaxial structure is electrically connected to the first conductive layer in the channel structure.

Description

technical field [0001] The present application relates to the technical field of three-dimensional memory manufacturing, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] Three-dimensional memory has become the mainstream structure of memory flash memory due to its high storage density, high stability and mature manufacturing process. However, with the development of three-dimensional memory technology, the number of ON (Oxide / Nitride) stacks in three-dimensional memory (such as 3D NAND) is increasing, and the consistency of the epitaxial structure at the bottom of the channel hole in three-dimensional memory is getting worse. Contents of the invention [0003] In order to solve the above technical problems, an embodiment of the present application provides a method for manufacturing a three-dimensional memory, so as to improve the consistency of the epitaxial structure in the three-dimensional memory. [0004] I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11578
CPCH10B43/35H10B43/20
Inventor 耿万波薛磊刘庆波薛家倩姚兰刘小欣
Owner YANGTZE MEMORY TECH CO LTD
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