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Semiconductor device and preparation method thereof, and electrical equipment

A technology for electrical equipment and semiconductors, applied in the field of semiconductor devices and their preparation, can solve problems such as low integration, large transistor size, and failure to manufacture, and achieve the effect of improving integration

Pending Publication Date: 2020-02-14
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to meet the performance requirements of the transistor, the size of the transistor is usually large, and many transistor structures cannot be prepared on a silicon substrate, and the integration level is relatively low.

Method used

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  • Semiconductor device and preparation method thereof, and electrical equipment
  • Semiconductor device and preparation method thereof, and electrical equipment
  • Semiconductor device and preparation method thereof, and electrical equipment

Examples

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Embodiment Construction

[0017] The technical solutions in the embodiments of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the application. Obviously, the described embodiments are only part of the implementations of the application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0018] It should be noted that if there are directional indications (such as up, down, left, right, front, back...) in the implementation of the present application, the directional indications are only used to explain the position in a certain posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0019] In addition, if there are descriptions involving "first", ...

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PUM

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Abstract

The invention discloses a semiconductor device, a preparation method thereof and electrical equipment. The semiconductor device includes a silicon substrate, a first transistor structure, and a secondtransistor structure. The silicon substrate comprises a first silicon layer, an insulating layer and a second silicon layer which are stacked in sequence. The first transistor structure is formed onthe first silicon layer. The second transistor structure is formed on the second silicon layer. The semiconductor device provided by the invention can comprise more transistor structures, and the integration level is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and electrical equipment. Background technique [0002] For transistors, such as insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT for short), there are certain requirements on current capability and withstand voltage capability. However, in order to meet the performance requirements of the transistor, the size of the transistor is generally large, and many transistor structures cannot be prepared on a silicon substrate, and the integration degree is relatively low. Contents of the invention [0003] The main purpose of the present application is to provide a semiconductor device, its preparation method, and electrical equipment. The semiconductor device of the present application can include more transistor structures, which improves the integration degree. [0004] To achieve t...

Claims

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Application Information

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IPC IPC(8): H01L21/8222H01L27/06H01L27/082
CPCH01L21/8222H01L27/082H01L27/0688
Inventor 兰昊冯宇翔
Owner GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD