Preparation method for transparent semiconductor material double-sided alignment mark

Abstract

The invention discloses a preparation method for a transparent semiconductor material double-sided alignment mark. The preparation method comprises the following steps of: determining a laser incidentposition on the front surface of a transparent semiconductor material sample according to mark process parameters input by a user, forming a laser mark in the transparent semiconductor material sample according to the laser incident position, and forming an alignment mark on the back surface of the transparent semiconductor material sample according to the laser mark. According to the preparationmethod for the transparent semiconductor material double-sided alignment mark provided by the embodiment of the invention, the laser mark is formed in the transparent semiconductor material;, and thealignment mark is formed on the back surface of the sample according to the laser mark, and therefore, the preparation method does not need to form an etching mark on the surface of the sample, ensures the integrity of the front surface of the sample to the maximum extent, does not cause damage to the device structure in the sample, avoids the influence of sample surface damage on device distribution in the sample, and improves the performance and reliability of the sample.

Description

technical field [0001] The invention relates to the technical field of semiconductor power device preparation, in particular to a method for preparing alignment marks on both sides of a transparent semiconductor material. Background technique [0002] In recent years, the third generation of transparent semiconductor materials - wide bandgap transparent semiconductor materials, has become a new driving force for the development of today's electronics industry. Wide bandgap transparent semiconductor materials have the characteristics of high thermal conductivity, high electron saturation velocity, high breakdown voltage, and low dielectric constant, which theoretically guarantee their wide application range. For example, they can be used in SiC and GaN and other power electronic devices. [0003] In the process of preparing such electronic power devices, the photolithography process directly determines the feature size of large-scale integrated circuits, which is a key proce...

AI Technical Summary

Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a method for preparing a double-sided alignment mark of a transparent semiconductor material, so as to solve the problem of easily causing damage to the surface of the substrate material and affecting the Distribution of Devices on a Circle

Images