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Ring-shaped element for a plasma etcher and method for etching substrate using the same

A ring-shaped component and etching device technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve the problems of complex structure, difficult to realize the precise design of dielectric and edge parts, etc., and achieve long replacement cycle and effective Effects of Etching Process and Efficiency Improvement

Active Publication Date: 2020-02-21
SK恩普士有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned patent has a complex structure, and it is difficult to achieve a precise design between the dielectric and the edge portion

Method used

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  • Ring-shaped element for a plasma etcher and method for etching substrate using the same
  • Ring-shaped element for a plasma etcher and method for etching substrate using the same
  • Ring-shaped element for a plasma etcher and method for etching substrate using the same

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Embodiment Construction

[0061] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which the present invention pertains can easily realize the present invention. The present invention can be realized in various embodiments and is not limited to the examples described in this specification. Throughout the specification, the same reference signs are used for the same or similar structural elements.

[0062] Throughout the specification, the term "combination of ..." contained in the Markush-type description refers to a mixture or combination of more than one selected from the group consisting of components of the Markush-type description, thereby meaning that the present invention includes More than one widget selected in a Kush group.

[0063] Throughout the specification, the terms "first", "second", or "A", "B", etc. are used to distinguish them from each other.

[0064] Throughout the specific...

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Abstract

The invention relates to a ring-shaped element for a plasma etcher and a method for etching substrate using the same. The ring-shaped element includes a body, which is formed by a body top surface, abody bottom surface, a body outer diameter surface and a body inner diameter surface in an enclosing manner, wherein a specified space is formed between the body top surface and the body bottom surface, the body outer diameter surface is a surfaced formed by connecting the outer contour lines of the body top surface and the body bottom surface, and the inner contour lines of the body inner diameter surface and the body top surface are connected and enclose a part or the whole of the body; a mounting unit, which is formed by a mounting unit top surface, a mounting unit bottom surface, and a mounting unit inner diameter surface in an enclosing manner, wherein the outer diameter of the mounting unit top surface is directly connected to the body inner diameter surface, the mounting unit top surface is located at a position lower than the body top surface, a specified space is formed between the mounting unit bottom surface and the mounting unit top surface, the mounting unit inner diametersurface is a surface formed by connecting the inner contour lines of the mounting unit top surface and the mounting unit bottom surface.

Description

technical field [0001] The present invention relates to an etching method for a ring member for an etching device and a substrate using the same. Background technique [0002] In a plasma processing apparatus, an upper electrode and a lower electrode are arranged in a chamber, a substrate such as a semiconductor wafer or a glass substrate is mounted on the lower electrode, and electric power is applied between the two electrodes. Electrons accelerated by the electric field between the two electrodes, electrons emitted from the electrodes, or heated electrons collide with molecules of the carrier gas, thereby generating a plasma of the carrier gas. Active species in the plasma, such as radicals or ions, perform desired microprocessing, such as etching, on the surface of the substrate. [0003] Recently, design rules for manufacturing microelectronic devices and the like have become finer, and in particular, plasma etching is required to have higher dimensional accuracy, thus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/3065H01J37/32
CPCH01L21/67069H01L21/3065H01J37/32642H01J37/32431H01J37/32623C23C16/32C04B35/563C04B2235/5445C04B2235/422C04B2235/604C04B2235/668C04B35/64C04B35/62695C04B2235/94H01J37/244H01J37/3255
Inventor 黄成植李在钒吴浚禄闵庚烈金京仁姜仲根
Owner SK恩普士有限公司