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Power semiconductor module

A power semiconductor and molding technology, which is applied to semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc. Effect

Pending Publication Date: 2020-02-21
SHENZHEN STS MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the deficiencies in the prior art, the object of the present invention discloses a power semiconductor module, which is used to solve the problem that when the existing power semiconductor modules are soldered with solder paste, there is a need for reflow soldering in a vacuum device during the soldering process and the need for soldering after soldering. Flux cleaning, resulting in complex process and high equipment cost

Method used

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Embodiment 1

[0033] see Figure 1-8 , Embodiment 1 of the present invention discloses a power semiconductor module 100, including a lead frame 10, a first chip 20, a second chip 30, a wire 40, and a molding body 50, and the lead frame 10 includes a first patch area 11, a set The second patch area 12 on one side of the first patch area 11, the first pin 13 located on the side of the first patch area 11 away from the second patch area 12 and connected to the first patch area 11, And the second pin 14 connected with the second patch area 12, the first chip 20 is attached to the first patch area 11, and the second chip 30 is attached to the second patch area 12; The two chips 30, the first pin 13 and the second pin 14 are connected by a wire 40; the first patch area 11, the second patch area 12, the first chip 20, the second chip 30, and the first pin 13, one end connected to the first patch area 11, and one end connected to the second pin 14 and the second patch area 12 are packaged in the m...

Embodiment 2

[0055] The power semiconductor module provided in this embodiment differs from the power semiconductor module provided in Embodiment 1 in that: in this embodiment, the length of the first pin 13 and the second pin 14 is 11.7 mm. For the structure of other components and the connection relationship among them, reference may be made to Embodiment 1, and details are not described here.

Embodiment 3

[0057] The power semiconductor module provided in this embodiment differs from the power semiconductor module provided in Embodiment 1 in that: in this embodiment, the length of the first pin 13 and the second pin 14 is 9.5 mm. For the structure of other components and the connection relationship among them, reference may be made to Embodiment 1, and details are not described here.

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Abstract

The invention discloses a power semiconductor module which includes a lead frame, a first chip, a second chip, a lead, and a mold seal body. The lead frame includes a first patch area, a second patcharea, a first pin connected with the first patch area, and a second pin connected with the second patch area. The first chip is mounted in the first patch area, and the second chip is mounted in the second patch area. The first chip, the second chip, the first pin and the second pin are communicated with each other through wires. The first patch area, the second patch area, the first chip, the second chip, one end, which is connected with the first patch area, of the first pin, and one end, which is connected with the second patch area, of the second pin are encapsulated in the mold seal body.The surface, which is adhered with the first chip, of the first patch area is lower than the surface, which is adhered with the second chip, of the second patch area. The power semiconductor module disclosed by the invention has the advantages of simplified process, reduced equipment cost, improved product yield and better heat dissipation.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to the field of packaging and manufacturing of power semiconductor modules. Background technique [0002] The internal structure of a traditional intelligent power semiconductor module consists of a driver chip, a power chip, a copper-clad ceramic substrate, and a lead frame. The driver chip is usually fixed on the lead frame by silver glue, and the power chip is pasted on the copper-clad ceramic substrate by solder paste. , The copper-clad ceramic substrate is also connected to the lead frame through solder paste. The intelligent power semiconductor module made by this connection method has the following disadvantages: [0003] 1. Since the solder paste needs to be heated and melted and then cooled and solidified, it can play the role of welding, but the solder paste will produce bubbles during the heating and melting process, so it is necessary to reflow in a vacuum env...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/065H01L23/495H01L23/31
CPCH01L25/0655H01L23/49503H01L23/49541H01L23/3114H01L2224/49111H01L2224/48139
Inventor 鲁强龙石晓磊丁锋
Owner SHENZHEN STS MICROELECTRONICS