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Thyristor and a manufacturing method thereof

A manufacturing method and thyristor technology, applied in the direction of thyristor, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as drift, increase high temperature leakage, reliability, etc., achieve good reliability, facilitate voltage regulation, and increase junction temperature. Effect

Pending Publication Date: 2020-02-21
LITTELFUSE SEMICON WUXI
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  • Abstract
  • Description
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Problems solved by technology

[0003] However, the existing series of dual-mesa thyristors such as 125°C junction temperature usually use glass as a passivation protection layer to ensure proper voltage blocking capability and long-term reliability, however, when at 150°C, the glass formed A passivated protective layer will greatly increase high temperature leakage, which can easily lead to drift and reliability issues

Method used

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  • Thyristor and a manufacturing method thereof
  • Thyristor and a manufacturing method thereof
  • Thyristor and a manufacturing method thereof

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Embodiment Construction

[0038] While the present disclosure will be fully described with reference to the accompanying drawings containing preferred embodiments of the present disclosure, it should be understood before proceeding that those skilled in the art may modify the inventions described herein while obtaining the technical effects of the present disclosure. Therefore, it should be understood that the above description is a broad disclosure for those of ordinary skill in the art, and its content is not intended to limit the exemplary embodiments described in the present disclosure.

[0039] In addition, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a comprehensive understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in diagrammatic form to...

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Abstract

The invention discloses a thyristor and a manufacturing method thereof. The thyristor comprises: an N-type substrate which is provided with a first surface and a second surface opposite to the first surface; a P-type doped layer, wherein the P-type doped layer is formed on the first surface and / or the second surface of the N-type substrate; a groove which penetrates the P-type doping layer from the surface, far away from the N-type substrate, of the P-type doped layer and extends into the substrate; and a glass passivation protection layer, wherein the glass passivation protection layer is formed in the groove, a thin oxygen layer is formed among the P-type doped layer, the N-type substrate and the glass passivation protection layer, and a semi-insulating polycrystalline silicon layer is formed between the thin oxygen layer and the glass passivation protection layer.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a thyristor and a manufacturing method thereof. Background technique [0002] Thyristor (Thyristor) is the abbreviation of thyristor, also known as silicon-controlled rectifier; thyristor has the characteristics of silicon rectifier devices, can work under high voltage and high current conditions, and its working process can be controlled and widely used In electronic circuits such as controllable rectification, AC voltage regulation, non-contact electronic switch, inverter and frequency conversion. [0003] However, the existing series of dual-mesa thyristors such as 125°C junction temperature usually use glass as a passivation protection layer to ensure proper voltage blocking capability and long-term reliability, however, when at 150°C, the glass formed Passivating the protective layer will greatly increase high temperature leakage, which can easily lead to dr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L29/06H01L21/331
CPCH01L29/74H01L29/0649H01L29/0611H01L29/66363H01L23/3178
Inventor 张环朱迺茜周继峰
Owner LITTELFUSE SEMICON WUXI
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