Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device comprises a method for forming an epitaxial source / drain structure in a semiconductor device. The method includes providing a substrate having a plurality of fins extending from the substrate. In some embodiments, a liner layer is formed over the plurality of fins. The liner layer is patterned to expose a first group of fins of the plurality of fins in a first region. In some embodiments, a first epitaxial layer is formed over the exposed first group of fins and a barrier layer is formed over the first epitaxial layer. Thereafter, the patternedliner layer may be removed. In various examples, a second epitaxial layer is selectively formed over a second group of fins of the plurality of fins in a second region.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices, and more particularly to epitaxial source / drain structures formed on fins. Background technique [0002] The electronics industry has experienced continued growth in demand for smaller, faster electronic devices that can simultaneously support increasingly complex functions. To sum up, the trend of the semiconductor industry is to form integrated circuits with low cost, high performance, and low energy consumption. These long-range goals are primarily achieved by reducing the size (eg, minimum feature size) of semiconductor integrated circuits, which improves throughput and reduces associated costs. However, scaling down also increases the complexity of the semiconductor process. To achieve continued advances in semiconductor integrated circuits and devices, similar advances are required in semiconductor formation processes and technologies. [0003] Recently introduced multi-gate...

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Problems solved by technology

So each additional mask used for a given process adds cost and complexity to the process

Additionally, in at least some existing examples, separate photolithography processes and separate masks are used to define epitaxial n-type source / drain regions and epitaxial p-type source / drain regions, which may also require deposition of and removal of additional masking layers (such as dielectric isolation layers), which cause epitaxial layer loss (such as epitaxial layer loss in n-type source / drain regions and p-type source / drain regions)

Therefore, the existing technology has not yet proved to fully meet the needs of all aspects

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