Trench gate semiconductor device and preparation method thereof

A technology of semiconductor and trench gate, which is applied in the field of trench gate semiconductor devices and its preparation, and can solve problems such as thin seams or cavities that are prone to appear

Inactive Publication Date: 2020-02-28
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Based on this, it is necessary to propose a new trench gate semiconductor device and its preparation method in view of t...

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  • Trench gate semiconductor device and preparation method thereof
  • Trench gate semiconductor device and preparation method thereof
  • Trench gate semiconductor device and preparation method thereof

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Embodiment Construction

[0036] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associa...

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Abstract

The present application relates to a trench gate semiconductor device and a preparation method thereof. The preparation method includes: providing a semiconductor substrate; disposing a trench on thesubstrate, wherein the trench has a bottom groove and a top groove extending upward from the top of the bottom groove to enlarge an opening, the bottom groove has a first side wall, the top groove hasa second side wall, and an included angle between the extension direction of the first side wall and the upper surface of the semiconductor substrate is larger than an included angle between the extension direction of the second sidewall and the upper surface of the semiconductor substrate; forming a gate dielectric layer on the inner wall of the trench; and filling the trench with a gate conductive layer. By designing the trench as a funnel, it is possible to avoid voids and fine seams when the trench is filled.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a trench gate semiconductor device and a manufacturing method thereof. Background technique [0002] In semiconductor devices, trench gates are generally used to increase current density. In the specific process of forming the trench gate, it is necessary to open the trench first, and then fill the trench to form the trench gate. Because the groove generally has a high aspect ratio, the aspect ratio of the conventional groove is 7 to 10. Due to the high aspect ratio, it is easy for the filler to close in advance during the filling process of the groove, causing the groove There are holes or slits in the gate, which affect the performance of the device. [0003] Currently, there are several ways to avoid voids or crevices: [0004] The first method: increasing the inclination of the side wall of the trench, so that the opening of the trench gradually increases from the b...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/331H01L29/78H01L29/739
CPCH01L29/66348H01L29/66666H01L29/7397H01L29/7828
Inventor 周旭王珏钟荣祥钟志鸿眭小超
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
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