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Programming method and system of memory

A programming method and memory technology, applied in the field of memory programming methods and systems, can solve problems such as high power consumption of memory, and achieve the effects of saving energy, reducing power consumption, and reducing power consumption

Pending Publication Date: 2020-03-17
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a memory programming method and system to solve the technical problem of high power consumption during memory programming

Method used

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  • Programming method and system of memory
  • Programming method and system of memory
  • Programming method and system of memory

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Experimental program
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Embodiment A

[0025] see figure 1 , figure 1 It is a schematic flow chart of a memory programming method in Embodiment A of the present invention. The memory programming method is used to improve the durability and ease of use of data read from the memory, so as to improve the life of the memory. The memory programming method includes the following steps:

[0026] Step S1: In the programming sequence B11, apply a programming voltage to the storage cells of the memory, there are r storage cells, and r is a positive integer;

[0027] Step S2: During the verification sequence Y11, apply a verification voltage to r memory cells, and when u memory cells fail the verification, then in the programming sequence B1u, apply a process voltage to the u memory cells that failed the verification Amplified programming voltage to rewrite data, 0

[0028] Step S3: When verifying the sequence Y1u, apply a verifying voltage to u rewritten memory cells, and if all the verificati...

Embodiment B

[0045] see Image 6 , Image 6 It is a schematic diagram of the module structure of the programming system 12 of the memory of the present invention. The memory programming system 12 can execute the memory programming method provided by any embodiment of the present invention. The memory programming system 12 includes:

[0046] The programming module 121 is used to apply a programming voltage to the storage cells of the memory when programming the sequence B11. There are r storage cells, and r is a positive integer;

[0047] The verification module 122 is used to apply a verification voltage to the r memory cells when verifying the sequence Y11. When u memory cells fail to verify, then when the programming sequence B1u is used, the programming module 121 is also used to check the u memory cells. Applying an amplified programming voltage to rewrite data to the memory cells that fail the verification, 0

[0048] The verification module 122 is al...

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Abstract

The invention discloses a programming method and system of a memory. The method comprises the following steps that when a time sequence B11 is programmed, programming voltage is applied to r storage units of the memory, and r is a positive integer; when the time sequence Y11 is verified, verification voltage is applied to r storage units, when u storage units fail to be verified, amplified programming voltage is applied to the u storage units failing to be verified to rewrite data when the time sequence B1u is programmed, u is larger than 0 and smaller than or equal to r, and u is a positive integer; and when the time sequence Y1u is verified, verification voltage is applied to the u storage units in which the data is rewritten, verification ends if all the storage units are successfully verified, and the data is re-written into the v storage modules in which the verification fails if v storage units fail to be verified and v is greater than or equal to 0 and less than or equal to u.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of memory, and in particular, to a memory programming method and system. Background technique [0002] Memory is a component that must be used in programming, such as Nand flash memory. Nand flash memory is a kind of non-volatile memory, which has the advantages of fast rewriting speed and large storage capacity. In the Nand flash memory, especially the TLC type memory, the state of the storage unit is more, and when performing programming verification, more electric energy is needed and the power consumption is larger. [0003] Therefore, how to reduce the power consumption of storage has become a demand in the field of memory technology. Contents of the invention [0004] The invention provides a memory programming method and system to solve the technical problem of high power consumption during memory programming. [0005] In the first aspect, the embodiment of the present in...

Claims

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Application Information

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IPC IPC(8): G06F1/3234G11C16/34
CPCG06F1/3275G11C16/3404
Inventor 贺元魁潘荣华
Owner GIGADEVICE SEMICON (BEIJING) INC
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