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Silicon dioxide layer, method for producing same, composition for forming same, and electronic device

A technology of silica and composition, applied in the direction of surface coating liquid device, coating, pretreatment surface, etc., can solve the problems of increasing the turbidity of the composition, reducing the stability of handling, etc., and achieving a reduction in the increase rate Effect

Active Publication Date: 2022-02-11
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the composition for forming a silica layer is left in the air, the turbidity of the composition increases and the composition reacts with moisture in the atmosphere, thereby reducing handling stability

Method used

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  • Silicon dioxide layer, method for producing same, composition for forming same, and electronic device
  • Silicon dioxide layer, method for producing same, composition for forming same, and electronic device
  • Silicon dioxide layer, method for producing same, composition for forming same, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0083] A 1 L reactor equipped with a stirrer and temperature controller was internally replaced with dry nitrogen. Subsequently, 800 g of dry pyridine was injected into the reactor, and the reactor was cooled to -1°C. Subsequently, 60 g of dichlorosilane was injected therein at a rate of 200 sccm over 65 minutes. The obtained mixture was aged for one hour while being stirred, and 37 g of ammonia was slowly injected therein at a rate of 200 sccm over 4 hours. While stirring, the obtained mixture was aged for 2 hours. Then, dry nitrogen was injected into the reactor over 12 hours to remove ammonia therein. The obtained white slurry product was filtered using a 0.1 μm Teflon filter under a dry nitrogen atmosphere to obtain 680 g of a filtered solution. Subsequently, 800 g of dry xylene was added thereto, and the solid therein was adjusted to have a concentration of 20% by repeatedly substituting xylene for pyridine three times using a rotary evaporator, and then filtered with ...

Synthetic example 2

[0085]A 1 L reactor equipped with a stirrer and temperature controller was internally replaced with dry nitrogen. Subsequently, 800 g of dry pyridine was injected into the reactor, and the reactor was cooled to -1°C. Then, 60 g of dichlorosilane was injected therein at a rate of 200 sccm over 65 minutes. The obtained mixture was aged for 1 hour while being stirred, and 37 g of ammonia was slowly injected therein at a rate of 200 sccm over 4 hours. While stirring, the obtained mixture was aged for 2 hours. Then, dry nitrogen gas was injected thereinto for 12 hours to remove the remaining ammonia in the reactor. The obtained white slurry product was filtered using a 0.1 μm Teflon filter under a dry nitrogen atmosphere to obtain 680 g of a filtered solution. Then, 800 g of dry xylene was added thereto, and the solid content was adjusted to have a concentration of 20% by repeatedly substituting xylene for pyridine three times using a rotary evaporator, followed by filtration wi...

Synthetic example 3

[0087] A 1 L reactor equipped with a stirrer and temperature controller was internally replaced with dry nitrogen. Then, 800 g of dry pyridine was injected into the reactor, and the reactor was cooled to -1°C. Subsequently, 60 g of dichlorosilane was injected therein at a rate of 200 sccm over 65 minutes. The obtained mixture was aged for 1 hour while being stirred, and 37 g of ammonia was slowly injected therein at a rate of 200 sccm over 4 hours. While stirring, the obtained mixture was aged for 2 hours. Dry nitrogen was injected over a period of 12 hours to remove residual ammonia in the reactor. The obtained white slurry product was filtered using a 0.1 μm Teflon filter under a dry nitrogen atmosphere to obtain 680 g of a filtered solution. Subsequently, 800 g of dry xylene was added thereto, and the solid content was adjusted to have a concentration of 20% by repeatedly substituting xylene for pyridine three times using a rotary evaporator, followed by filtration with ...

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PUM

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Abstract

The invention discloses a composition for forming a silicon dioxide layer, a method for manufacturing a silicon dioxide layer using the composition, a silicon dioxide layer manufactured by the method, and a method comprising the The electronic device of the silicon dioxide layer, the composition for forming the silicon dioxide layer comprises: a silicon-containing polymer, including polysilazane, polysiloxazane or a combination thereof; and a solvent, wherein the The silicon polymer has a polystyrene-equivalent weight-average molecular weight of 4,000 g / mol to 13,000 g / mol, and satisfies Equation 1, in which A indicates the molecular weight of the silicon-containing polymer in a gel permeation chromatogram curve. The peak area of ​​the polystyrene-equivalent weight average molecular weight of 2,700 g / mol to 9,000 g / mol, and B indicates that the polystyrene-equivalent weight average molecular weight of the silicon-containing polymer in the gel permeation chromatography curve is Peak areas from 200 g / mol to 2,700 g / mol. [Equation 1] 0.98≤B / A≤1.24.

Description

technical field [0001] The present disclosure relates to a composition for forming a silicon dioxide layer, a method for manufacturing a silicon dioxide layer, and a silicon dioxide layer and an electronic device manufactured by the method. Background technique [0002] With the development of semiconductor technology, in order to increase the integration of smaller semiconductor chips and improve performance, research has been conducted on semiconductor memory cells with high integration and high speed. However, since semiconductors require high integration and spaces between lines become narrow, RC delays, crosstalk, response speed degradation, etc. may occur, and thus cause problems in semiconductor interconnection. To address this issue, proper separation between devices may be required. [0003] Therefore, proper separation between devices is performed by widely using a silicon dioxide layer formed of a silicon-containing material as an interlayer insulating layer, a p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D183/16C09D183/14C09D1/00
CPCC09D183/16C09D183/14C09D1/00C08L83/08B05D7/24B05D3/0254B05D3/0413B05D1/002B05D2518/00
Inventor 裵鎭希郭泽秀李忠宪黄丙奎司空峻卢健培任浣熙赵炫洙
Owner SAMSUNG SDI CO LTD
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