Semiconductor device and forming method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as reducing the channel leakage current of transistors with buried gate structures, and achieve the effect of reducing the channel leakage current
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[0042] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0043] Figure 6 The schematic diagram of the semiconductor device provided for this embodiment, such as Figure 6 As shown, the semiconductor device includes: a substrate 1 in which an active region 111 and a drain region 112 are formed; a gate structure 2 formed between the source region 111 and the drain region 112 A transistor is formed in the substrate 1 ; and an adjustment region 113 is located in the substrate 1 under the gate structure 2 to increase the doping concentration of the channel of the transis...
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