CVD device tail gas treatment device

A technology for tail gas treatment and adsorption device, which is applied in the fields of combination device, dispersed particle separation, chemical instruments and methods, etc., can solve the problems of poor treatment effect, increase tail gas and water, etc., so as to improve the treatment effect and increase the contact area. Effect

Pending Publication Date: 2020-03-31
江苏晋誉达半导体股份有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a CVD device tail gas treatment device, which can increase the contact area between tail gas and water, and adopts a combination of water curtain and adsorption structure to treat tail gas, effectively solving the problem of In the past, the problem of poor effect was only solved by water curtain

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CVD device tail gas treatment device
  • CVD device tail gas treatment device
  • CVD device tail gas treatment device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] Such as Figure 1 to Figure 4 As shown, a CVD device tail gas treatment device includes a high-temperature reaction barrel 1 (the prior art, its structure is known to those skilled in the art, and various gases in the tail gas are reacted to generate soluble or precipitated dust), and the high-temperature reaction The top of the barrel 1 is provided with an air inlet 11, and the bottom of the high-temperature reaction barrel 1 communicates with the righ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a CVD device tail gas treatment device. The treatment device can increase the contact area of tail gas and water andtreat the tail gas by combining a water curtain and an adsorption structure, thereby effectively solving the problem of poor treatment effect due to the fact that only the water curtain is used in the past. The device comprises a high-temperature reaction barrel, a gas inlet pipe is arranged at the top of the high-temperature reaction barrel, the bottom of the high-temperature reaction barrel iscommunicated with the right side of a first treatment barrel through a first connecting pipe, the top of the first treatment barrel is connected to the right end part of a second treatment barrel through a second connecting pipe, a first adsorption device is arranged in the first treatment barrel above a first spraying pipe, and a vertical second adsorption device is further arranged in the middleof the second treatment barrel. The device is simple to operate, convenient to use and suitable for various places.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a CVD device tail gas treatment device. Background technique [0002] With the advancement of science and technology and the development of society, my country's electronic technology has developed rapidly, followed by the rapid development of semiconductor technology. In the CVD semiconductor manufacturing process, a large amount of exhaust gas will be discharged, which contains a large amount of harmful substances. If it is not treated, it will cause great harm to the staff and the surrounding environment. [0003] Existing tail gas treatment devices usually use spraying devices. The existing spraying devices usually generate a water curtain at the bottom of the spray pipe, and contact the tail gas through the water curtain. However, in the actual application process, the existing The sprinkler device can't fully mix the water and exhaust gas, because the treatment e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/75B01D53/74B01D53/38B01D53/18B01D53/04B01D50/00
CPCB01D50/00B01D53/04B01D53/18B01D53/38B01D53/74B01D53/75
Inventor 丁桃宝吴啸周琛怿
Owner 江苏晋誉达半导体股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products