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Micro device and preparation method thereof

A micro-device and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of waste of efficiency, large luminous angle, etc.

Pending Publication Date: 2020-04-10
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a micro-device and its preparation method for the above-mentioned lack of wells in the prior art, aiming to solve the problem of waste of efficiency caused by large light-emitting angles in existing Micro LEDs

Method used

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  • Micro device and preparation method thereof
  • Micro device and preparation method thereof

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preparation example Construction

[0055] Based on the above-mentioned micro-device, the present invention also provides a preparation method of a micro-device, such as Figure 7 Shown is a flow chart of a method for preparing a micro-device of the present invention. Described preparation method comprises:

[0056] S1. A multi-quantum well layer is arranged between the first semiconductor layer and the second semiconductor layer;

[0057] The first semiconductor layer can be doped with a pentavalent element such as phosphorus in a pure semiconductor material, such as gallium nitride (GaN), to form the above-mentioned first semiconductor layer. In the first semiconductor layer, free electrons are many, Holes have few electrons, mainly conduct electricity by free electrons, the higher the concentration of many electrons (free electrons), the stronger the conductivity of the first semiconductor layer; in the same way, the second semiconductor layer can be in a pure semiconductor material, such as nitride Gallium...

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Abstract

The invention discloses a micro device and a preparation method thereof. The micro device comprises a first semiconductor layer, a multi-quantum well layer, a second semiconductor layer, a first electrode and a second electrode, the multi-quantum well layer is arranged between the first semiconductor layer and the second semiconductor layer; the first electrode is coupled with the first semiconductor layer; the second electrode is coupled with the second semiconductor layer; the light concentration layer is at least formed on the outer side surface of the multi-quantum well layer, so that thelight emitting angle of the micro device is reduced, the light emitting direction is limited, and the single-color micro devices emit light independently without mutual influence, so that the light source is more concentrated, the efficiency waste is effectively solved, and the light emitting efficiency is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor display, in particular to a micro device and a preparation method thereof. Background technique [0002] With the continuous development of display technology, compared with liquid crystal display (LCD), micro-organic light-emitting diode (Micro-LED) is a current-type light-emitting device, because of its self-illumination, high luminous efficiency, color Saturation, brightness, reliability, and the ability to be fabricated on flexible substrates are increasingly being used in the field of high-performance displays. Such as figure 1 As shown, at present, Micro-LEDs are driven by current to generate light, but because the light is in a scattered state, the light-emitting angle is large (generally, the light-emitting angle of Micro-LEDs is greater than 120 degrees). The mutual influence on the luminous effect, the angle is too large will not only easily lead to light leakage or uneven light ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/44H01L33/46H01L33/00
CPCH01L33/06H01L33/44H01L33/46H01L33/0075H01L2933/0025
Inventor 伍凯义钟光韦杨然翔江仁杰沈佳辉
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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