Gallium Oxide Based Heterojunction Semiconductor Structures and Devices

Abstract

The invention discloses a heterojunction semiconductor structure based on gallium oxide. The structure includes: at least one gallium oxide base layer, the gallium oxide base layer has multiple contact surfaces; The gallium-based layer forms a heterojunction structure. Through this structure, the present invention realizes the matching of the forbidden band width, the matching of the conduction band and the matching of the valence band, and improves the current transport capability of the structure; in addition, the heterogeneous PN junction structure also realizes the matching of the crystal structure, It avoids the formation of a large number of dislocation defects at the contact surface of the heterogeneous PN junction, improves the forward transport performance of the PN junction, the on-resistance of the device using this structure, and the stability of the device performance; finally, the delafossite material The preparation process is simple, and it can be directly formed by a similar sol-gel method or hydrothermal synthesis method, which greatly reduces the preparation cost and process of the structure, and is easy to realize large-scale industrial production.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium oxide-based heterojunction semiconductor structure and a device thereof. Background technique [0002] Seeking wider band gap and higher material performance is an important trend in the development of compound semiconductor materials. Gallium oxide (Ga 2 o 3 ) semiconductor has a large forbidden band width (E g ~4.8eV), high breakdown field strength (E br ~8MV / cm), Baliga high quality factor (εμE br 3 ~3444), low growth cost (melting method to produce single crystal substrate) and other outstanding advantages, it is used for next-generation high-voltage high-power devices (such as Schottky barrier diodes (SBD), field effect transistors (MOSFET)), power One of the preferred materials for IC circuits and solar-blind ultraviolet photoelectric (200-280nm band) detectors. [0003] High-voltage and high-power devices have significant power conversion and energy...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problems of poor band structure matching, poor crystal structure matching, difficult material preparation process, and high preparation cost in the heterogeneous PN junction structure formed by the above-mentioned P-type material and gallium oxide, the present invention proposes a gallium oxide-based Heterojunction semiconductor structures and their devices

Images