Method for preparing film on large-area substrate through magnetron sputtering

A magnetron sputtering and large-area technology, applied in the field of magnetron sputtering systems, can solve the problem that the 2-inch target cannot meet the uniformity of thin film materials prepared by 6-inch substrates, achieve efficiency and cost savings, and large-scale applications Potential, the effect of simple and easy preparation process

Active Publication Date: 2020-05-12
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to overcome the defect that the 2-inch target material of the existing magnetron sputtering system cannot meet the uniformity of the thin film material prepared by the 6-inch substrate, the purpose of the present invention is to provide a method for preparing a thin film by magnetron sputtering on a large-area substrate

Method used

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  • Method for preparing film on large-area substrate through magnetron sputtering
  • Method for preparing film on large-area substrate through magnetron sputtering
  • Method for preparing film on large-area substrate through magnetron sputtering

Examples

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Effect test

Embodiment 1

[0048] A method for preparing a large-area substrate by a magnetron sputtering system is prepared by the following method:

[0049] (1) Install a zinc oxide target with a diameter of 2 inches and a thickness of 0.25 inches in the equipment, adjust the angle between the target and the substrate to be 86°, set the target base distance to 9 cm, and use a 6-inch single-sided polished silicon Use the substrate as the substrate, and carry out the following pretreatment: first, the substrate is ultrasonicated with acetone and alcohol for 5 minutes, then cleaned with deionized water, and finally the surface is dried;

[0050] (2) Put the pretreated substrate obtained in step (1) into the cavity of the magnetron sputtering equipment, and evacuate the deposition chamber so that the vacuum degree of the backside is 5×10 -7 torr;

[0051] (3) Introducing Ar with a purity of 99.999% 2 As the starter gas, set the rotation speed of the substrate to 15 revolutions / min, the substrate rotates...

Embodiment 2

[0058] (1) Install a zinc oxide target with a diameter of 2 inches and a thickness of 0.25 inches in the equipment, adjust the angle between the target and the substrate to 79°, set the target distance to 8cm, and use a single-throw 6-inch silicon oxide Make the substrate, and carry out the following pretreatment: first, the substrate is ultrasonicated with acetone and alcohol for 5 minutes, then cleaned with deionized water, and finally the surface is dried;

[0059] (2) Put the pretreated substrate obtained in step (1) into the cavity of the magnetron sputtering equipment, and evacuate the deposition chamber so that the vacuum degree of the backside is 3×10 -7 torr;

[0060] (3) Introducing Ar with a purity of 99.999% 2 As the starter gas, set the rotation speed of the substrate to 10 revolutions / min, the substrate rotates non-coaxially relative to the target, control the working pressure of the deposition chamber to 5mtorr, and the power to 100W, and perform magnetron sput...

Embodiment 3

[0064] (1) Install a metal aluminum target with a diameter of 2 inches and a thickness of 0.25 inches in the equipment, adjust the angle between the target and the substrate to 82°, set the target base distance to 8.5 cm, and use a single-throw 6-inch silicon Make the substrate, and carry out the following pretreatment: first, the substrate is ultrasonicated with acetone and alcohol for 3 minutes, then cleaned with deionized water, and finally the surface is dried;

[0065] (2) Put the pretreated substrate obtained in step (1) into the chamber of the magnetron sputtering equipment, and evacuate the deposition chamber so that the vacuum degree of the backside is 1×10 -7 torr;

[0066] (3) Introducing Ar with a purity of 99.999% 2 As the starter gas, set the rotation speed of the substrate to 20 rpm, the substrate is non-coaxially rotated relative to the target, the working pressure of the deposition chamber is controlled to 5 mtorr, the power is 200 W, and the magnetron sputte...

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Abstract

The invention relates to a method for preparing a film on a large-area substrate through magnetron sputtering. The method comprises the steps that the film is prepared on the substrate with the diameter of 6 inches through a target material with the diameter of 2 inches, wherein the distance between the target material and the substrate is smaller than or equal to 17 cm, the included angle betweenthe target material and the substrate is smaller than or equal to 90 degrees, and the non-uniformity of the thickness of the obtained film is smaller than or equal to 5%. According to the method, the2-inch target material is used, the 6-inch film is prepared by adjusting the included angle between the target material and the substrate, the target-substrate distance and other factors, the non-uniformity of the thickness of the obtained film is smaller than or equal to 5%, and compared with an existing method that a 2-inch target material can only be used for preparing a 4-inch film, the novelmethod has obvious improvement and is improved in the respects of film forming quality and efficiency, cost saving and the like; then, 6-inch film material with good uniformity can be prepared on different material interfaces through the novel method; and according to the method, the overall structure is simple, the functions are comprehensive, a research method is provided for magnetron sputtering coating of a small target and a large substrate, the coating efficiency is improved, and the coating cost is reduced.

Description

technical field [0001] The invention belongs to the field of magnetron sputtering systems, and in particular relates to a method for preparing thin films by magnetron sputtering on a large-area substrate. Background technique [0002] Integrated circuits are composed of several layers of thin films of different materials, and the technology of covering these thin films on silicon wafers is the so-called thin film deposition and thin film growth technology. The development of thin film deposition technology has developed into two main directions since the early vapor deposition: chemical vapor deposition technology (CVD) and magnetron sputtering coating technology (PVD). [0003] Magnetron sputtering coating technology is one of the most widely used deposition coating methods. Because it has the advantages of reducing the working pressure and voltage, increasing the sputtering rate and deposition rate, reducing the substrate temperature, and reducing the damage of the plasma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/50
CPCC23C14/3407C23C14/35C23C14/505
Inventor 宋志伟褚卫国
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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