Image sensor and charge transfer method
An image sensor and grid technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of affecting the response speed and increasing the transfer time, and achieve the effect of reducing the moving time and reducing the path through which electrons are transferred.
Inactive Publication Date: 2020-05-12
SHANGHAI HUALI MICROELECTRONICS CORP
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However, the surface electric field is strong, and the corresponding electrons will start to transfer first, while the electrons at the bottom will increase the transfer time due to the weak power plant, which will affect the overall response speed
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[0019] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0020] Hereinafter, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a specific order or chronological order. It is to be understood that these terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein includes a series of steps, the order in which these steps are presented is not necessarily the only order in which these steps can be performed, and some described steps may be omitted and / or...
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The invention provides an image sensor and a charge transfer method. The image sensor includes a substrate, an N-type heavily doped region located in the substrate, and a grid electrode located on oneside of the N-type heavily doped region, and an N-type doped region and a P-type isolation region which are located on the side, opposite to the N-type heavily doped region, of the grid electrode. The N-type doped region is located above the P-type isolation region, one part of the grid electrode is located on the surface of the substrate, the other part of the grid electrode is located in the substrate, and the cross section area, close to the surface of the substrate, of the grid electrode located in the substrate is larger than the cross section area, away from the surface of the substrate, of the grid electrode. According to the image sensor and the charge transfer method, the cross sectional area, close to the surface of the substrate, of the grid electrode located in the substrate is larger than the cross sectional area, far away from the surface of the substrate, of the grid electrode, the paths through which electrons at the bottom of the N-type heavily doped region are transferred are reduced, the moving time is shortened, and meanwhile the effect of electron moving of the upper portion and the lower portion is balanced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensor and a charge transfer method. Background technique [0002] CMOS image sensors have developed rapidly in the past ten years, and are now widely used in mobile phones, computers, digital cameras and other fields. In order to meet market demand and integrate more pixel units per unit area, the pixel size of CMOS image sensors has been gradually reduced from 5.6mm to 1.0mm. However, the reduction of the pixel size cannot simply be equivalent to the reduction of the size of the photodiode (Photodiode) in all directions, which is due to the limitation of the effective full well capacity (FWC) of the photodiode. If the size is too small to store enough electrons, the image quality will be severely degraded. [0003] The basic structure of a traditional 4T CMOS image sensor is as follows: figure 1 As shown, there are photodiode (PD), transfer transistor (Tx), r...
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Login to View More IPC IPC(8): H01L27/146
CPCH01L27/14605H01L27/14632H01L27/14643
Inventor 田志李娟娟邵华陈昊瑜
Owner SHANGHAI HUALI MICROELECTRONICS CORP