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3μm~5μm mid-wave infrared solid-state laser with narrow linewidth

A solid-state laser and narrow linewidth technology, applied in the field of optics, to achieve high power and increase the effect of amplification factor

Active Publication Date: 2021-03-23
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the output spectral line width of the existing 3 μm to 5 μm mid-wave infrared solid-state laser is relatively wide, and to provide a 3 μm to 5 μm mid-wave infrared solid-state laser with a narrow line width

Method used

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  • 3μm~5μm mid-wave infrared solid-state laser with narrow linewidth
  • 3μm~5μm mid-wave infrared solid-state laser with narrow linewidth

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specific Embodiment approach 1

[0038] Specific implementation mode one: the following combination figure 1 Explain that the 3 μm to 5 μm mid-wave infrared solid-state laser with narrow linewidth in this embodiment includes a first 2.1 μm half-wave plate 1-1, a second 2.1 μm half-wave plate 1-2, and a third 2.1 μm half-wave plate 1 -3, the fourth 2.1μm half-wave plate 1-4, medium-wave half-wave plate 1-5, the first polarizer 2-1, the second polarizer 2-2, the first plano-convex lens 3-1, the second plano-convex lens Convex lens 3-2, the third plano-convex lens 3-3, the fourth plano-convex lens 3-4, the first reflector 4-1, the second reflector 4-2, the first 45 ° mid-wave reflector 5-1, the first Second 45° MW reflector 5-2, third 45° MW reflector 5-3, fourth 45° MW reflector 5-4, BaGa 4 Se 7 Crystal 6, the first 45° medium wave filter 7-1, the second 45° medium wave filter 7-2, the third 45° medium wave filter 7-3 and ZnGeP 2 crystal 8;

[0039] The first 2.1 μm half-wave plate 1-1 and the first polariz...

specific Embodiment approach 2

[0057] Embodiment 2: The difference between this embodiment and Embodiment 1 is: the first 2.1 μm half-wave plate 1-1, the second 2.1 μm half-wave plate 1-2, and the third 2.1 μm half-wave plate 1- 3 and the fourth 2.1 μm half-wave plate 1-4 are coated with a 2.1 μm high-transparency film with a diameter of 10 mm to 15 mm; 10 mm to 15 mm; the surface of the first polarizer 2-1 and the second polarizer 2-2 are both coated with a high reflection film for 2.1 μm vertically polarized light and a high transmittance film for 2.1 μm horizontally polarized light, with a diameter of 10mm ~ 20mm. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0058] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the first plano-convex lens 3-1, the second plano-convex lens 3-2, the third plano-convex lens 3-3 and the fourth plano-convex lens The surface of the plano-convex lens 3-4 is coated with a 2.1 μm high-transparency film, the focal length is 20 mm to 400 mm, and the diameter is 1 mm to 50 mm; the surface of the first mirror 4-1 and the second mirror 4-2 are coated with 2.1 μm μm high reflection film with a diameter of 10 mm to 50 mm; the first 45° medium wave filter 7-1 is coated with a 3.5 μm to 4.0 μm high reflection film and a 4.4 μm to 4.7 μm high transmission film on one side, and the other side Coated with a 2.1 μm high-transparency film with a diameter of 10 mm to 20 mm; the second 45° medium wave filter 7-2 and the third 45° medium wave filter 7-3 are coated with a 3 μm to 5 μm high Reflective film, the other side is coated with a 2.1μm high-transparency film,...

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Abstract

The invention discloses a medium-wave infrared solid-state laser with narrow linewidth of 3-5 [mu]m, belongs to the field of optics, and solves the problem that the output spectral linewidth of the existing 3-5 [mu]m medium-wave infrared solid-state laser is relatively wide. The medium-wave infrared solid-state laser with narrow linewidth of 3-5 [mu]m comprises a 2.1[mu]m half-wave plate, a medium-wave half-wave plate, a polarizing film, a plano-convex lens, a reflector, a 45-degree medium-wave reflector, a BaGa4Se7 crystal, a 45-degree medium-wave filter lens and a ZnGeP2 crystal. Or the medium-wave infrared solid-state laser with the narrow linewidth of 3-5 [mu]m comprises a 2.1 [mu]m half-wave plate, a medium-wave half-wave plate, a polarizing film, a plano-convex lens, a reflector, a BaGa4Se7 crystal, a 45-degree medium-wave filter, a ZnGeP2 crystal, a 0-degree input mirror and a 0-degree output mirror. The medium-wave infrared solid-state laser with narrow linewidth of 3-5 [mu]m is used for the medium-wave infrared solid-state laser with the narrow linewidth of 3-5[mu]m.

Description

technical field [0001] The present invention belongs to the field of optics. Background technique [0002] The mid-wave infrared laser of 3 μm to 5 μm is in the transparent window of the atmosphere, and this band is located in the intrinsic absorption spectrum band of substances such as toxic gases, industrial emissions, and harmful chemicals. Lasers in this band are widely used in trace gas detection, On-line rapid diagnosis and detection of atmospheric pollutant emissions, spectroscopy and space optical communication, etc. At present, the infrared light released by the combustion of fuel used by mainstream aircraft and rockets is mainly in the 3μm-5μm medium-wave infrared band, so the 3μm-5μm medium-wave infrared laser can be used in military laser guidance, photoelectric countermeasures and photoelectric detection. Wait. The narrow-linewidth medium-wave light source can greatly increase the detection range of differential absorption radar, and meet the needs of spectral...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/06H01S3/091H01S3/106H01S3/108
CPCH01S3/0602H01S3/091H01S3/106H01S3/1083
Inventor 姚宝权刘高佑戴通宇段小明杨科
Owner HARBIN INST OF TECH