Method for manufacturing semiconductor element
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of expensive masks, deterioration of capacitance characteristics of variable capacitance elements, etc., to save the total number of masks and prevent capacitance characteristics. The effect of deterioration and cost reduction
Active Publication Date: 2020-05-26
NEXCHIP SEMICON CO LTD
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Problems solved by technology
If a variable capacitance element is mounted in a mixed manner with FETs, unwanted impurities may be injected into the variable capacitance element during the semiconductor manufacturing process, which may degrade the capacitance characteristics of the variable capacitance element.
[0004] In addition, in the manufacturing process of semiconductors, masks used in photolithography are very expensive, and it is desired to suppress the total number of masks used
However, if the masks used in each process are accidentally shared, unwanted impurities may be injected into the variable capacitance element
Method used
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manufacture example
[0075] Next, a method of manufacturing a semiconductor element according to a reference example will be described. Furthermore, the semiconductor manufacturing method of the reference example is a manufacturing example in which the epitaxial Ex is formed in the varactor region in the epitaxial formation step P6', and the masks in the first masking step and the second masking step are shared. The manufacturing method of the semiconductor involved in the reference example is to use Figure 8 The well formation step P1' shown, the first masking step, Figure 9 The channel forming process P3' shown, Figure 10 The gate formation process P4' shown, the second masking process, Figure 11 The epitaxial formation process P6' shown, and Figure 12 The source / drain forming step P7' shown is performed as a main step.
[0076] In the well forming step P1' according to the reference example, a well of a semiconductor element is formed on the surface of the substrate. Such as Figure 8 ...
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The aim of the invention is to provide a method for manufacturing a semiconductor element that can reduce costs and prevent deterioration of capacitance characteristics of variable capacitance elements. The method for manufacturing the semiconductor element comprises the following steps of forming FET and varactor diodes with MOS structure on the surface of a substrate with following steps of a first masking process of generating a photoresist layer on the surface of the substrate, wherein the shape of the photoresist layer covers a well surface of a varactor diode area, a channel formation step in which impurities having the same polarity as the well of a FET area formed on the surface of the substrate are injected into the surface of the substrate, and a channel region is formed for thewell of the FET area; a gate forming step, which forms ta gate G on the well of the FET area and the well of the varactor diode area through an insulating film; a second masking step, which generatesa second implantation barrier layer on the surface of the substrate, with the second implantation barrier layer covering the same area as a first implantation barrier layer; and an extending formationstep in which an impurity having a polarity opposite to the well of the FET area is injected into the surface of the substrate, wherein the extending area is formed for the well of the FET area.
Description
technical field [0001] The present invention relates to a method of manufacturing a semiconductor element. Background technique [0002] In order to achieve desired functions such as controlling the transmission frequency, variable capacitance elements are used in integrated circuits. As the variable capacitance element, a MOS type variable capacitance element (MOS varactor diode) is used. [0003] Integrated circuits are manufactured by mixing and mounting various semiconductor elements, so variable capacitance elements are manufactured together with, for example, FETs. When a variable capacitance element is mounted in a mixed manner with FETs, unwanted impurities may be injected into the variable capacitance element during the semiconductor manufacturing process, which may degrade the capacitance characteristics of the variable capacitance element. [0004] In addition, in the semiconductor manufacturing process, masks used in photolithography are very expensive, and it ...
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Patent Timeline
Login to View More IPC IPC(8): H01L29/93H01L29/94H01L27/06H01L21/335
CPCH01L27/0629H01L29/66181H01L29/93H01L29/94
Inventor 田矢真敏中野纪夫熊谷裕弘
Owner NEXCHIP SEMICON CO LTD