Array substrate

Abstract

The invention discloses an array substrate which comprises a plurality of sub-pixels arranged in an array mode, each sub-pixel is divided into a main area and a sub-area, a scanning line is arranged corresponding to each row of sub-pixels, the scanning lines are arranged outside the main areas and the sub-areas, and a data line is arranged corresponding to each column of sub-pixels. Each sub-pixelfurther comprises a main area thin film transistor and a secondary area thin film transistor, and the directions of horseshoe-shaped U-shaped openings of the main area thin film transistor and the secondary area thin film transistor are the same. According to the embodiment of the invention, in a 3TFT_8 domain pixel structure, the scanning lines are arranged outside a main region and a sub regionof the pixel structure, and the directions of the horseshoe-shaped U-shaped openings of the main region thin film transistor and the secondary region thin film transistor are in the same direction such that the aperture opening ratio of the pixel structure is effectively improved, and the penetration rate of the array substrate is improved.

Description

technical field [0001] The present application relates to the field of display technology, and in particular to an array substrate. Background technique [0002] With the development of liquid crystal display technology, the size of the display screen is getting larger and larger, and the traditional PSVA (polymer stable vertical alignment) pixel with 4 domains will highlight the poor performance of viewing angle deviation. In order to improve the viewing angle performance of the panel, 3T_8domain (8 domains and 3 transistors) PSVA pixels are gradually applied to the design of large-size TV panels, so that the 4 domains of the main (main) area and the sub (sub) area of ​​the same subpixel (subpixel) The 4 domains, through the characteristics of space and liquid crystal orientation differentiation, reduce the difference between front view and side view, that is, improve the characteristics such as side view color shift. [0003] At present, increasing the number of TFT (thin...

AI Technical Summary

Problems solved by technology

[0003] At present, increasing the number of TFT (Thin Film Transistor) devices is generally used to adjust the voltage division ratio, but this will cause the pixel aperture ratio / native penetration rate to be limited; at the same time, in order to prevent the risk of crosstalk caused by the metal wiring in the pixel electrode, it is generally necessary to increase Shield the metal layer for electric field shielding and reduce the influence of coupling capacitance on the pixel voltage, which will further limit the increase in aperture ratio

Images