Etching method and etching equipment for hole structure of semiconductor device

Abstract

The embodiment of the invention provides an etching method and etching equipment for a hole structure of a semiconductor device. The etching method comprises the following steps of: providing the semiconductor device of which a front-layer process is finished; generating plasma; controlling the plasma density by a single radio frequency power supply system; utilizing the single radio frequency power supply system to reduce the bombardment intensity of plasma when different media in the semiconductor device are etched, utilizing a focusing ring to reflect the plasma, driving the plasma into thearea of the semiconductor device, and etching hole structures in the different media of the semiconductor device, wherein when the distance between the inner peripheral edge of the focusing ring andthe outer peripheral edge of the semiconductor device is less than or equal to 1mm, the height of the focusing ring is set to be 5.1-27.9 mm; and when the distance is larger than 1 mm, the height of the focusing ring is set to be 1.1 mm-6.2 mm.

Description

technical field [0001] The invention relates to the technical field of etching equipment, in particular to an etching method for a hole structure of a semiconductor device and an etching equipment. Background technique [0002] In the process of preparing semiconductor devices, the hole structure is generally etched. [0003] At present, there is an etching equipment, such as AMAT MXP Poly etching equipment, which is equipped with a single (one) radio frequency power supply system (RF system for short) to control the plasma density and its bombardment. For different media of the device, the single RF power supply system will be used to reduce the bombardment of the plasma to ensure a better etching selectivity ratio when etching different media of the semiconductor device, but in order to ensure a higher etching selectivity ratio Reducing the bombardment intensity will inevitably reduce the power of the single radio frequency power supply system, and the plasma density will...

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Problems solved by technology

[0005] For this kind of etching equipment configured with a single RF power system, theoretically, you can choose to transform it into a dual RF power system, so that one of the RF power systems controls the plasma bombardment to ensure the etching selectivity ratio, and the other RF power system controls Plasma density is used to ensure the uniformity of etching, but large-scale changes are required, the feasibility is not very high, and there are many projects that need to be transformed, the transformation is difficult, the cost will be high, and the transformation period will be long

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