Roll-type GaN-based semiconductor device and preparation method thereof

Abstract

The invention provides a roll-type GaN-based semiconductor device and a preparation method thereof. The roll-type GaN-based semiconductor device comprises a second semiconductor substrate, a bonding material layer and a hollow and closed roll-type tubular structure, wherein the hollow and closed roll-type tubular structure comprises two SiN layers with pressure stress and tensile stress, a secondAlyGa<1-y>N layer, a GaN layer and a first AlyGa<1-x>N layer from outside to inside, and x is greater than 0 and less than 1, and y is greater than 0 and less than 1. Two SiN layers with tensile stress and pressure stress are formed, in the sacrificial layer etching process, the SiN layers with different stresses are mutually regulated and controlled to be automatically curled to form the hollow and closed roll-type tubular structure, and the size of the three-dimensional structure is small; meanwhile, the GaN-based semiconductor device formed by self-coiling can be used as a microfluidic channel, the inner surface of the GaN-based semiconductor device is protected by a passivation layer, the process is simple, and the heat dissipation performance of the semiconductor device can be ensured; and a cooling liquid can be introduced into the hollow part of the roll-type tubular structure to dissipate heat of the semiconductor device, so that the heat dissipation performance of the semiconductor device under a high-temperature condition can be ensured.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, in particular to a roll-type GaN-based semiconductor device and a preparation method thereof. Background technique [0002] As we all know, power electronic systems have always contributed to sustainable development and improved energy conversion rates. As one of the key components of energy conversion in power electronic systems, power semiconductor devices have always been the research focus of many scholars. As a representative of the third-generation semiconductor materials, GaN has a large band gap, high carrier mobility, and high breakdown voltage, and has been identified as a significant candidate for high-voltage, high-power, and high-frequency applications candidate. GaN-based semiconductor devices commonly used in the industry include GaN HEMT devices, GaN FinFETs and nanowire structures. [0003] Existing GaN HEMT devices usually have a planar structure, that is, th...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a roll-type GaN-based semiconductor device and its preparation method, which is used to solve the problem that GaN-based semiconductor devices in the prior art are difficult to meet both the small size of the device and the Without increasing the complexity of the process, it can also ensure the good heat dissipation performance of the device, etc.

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