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A quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problems of low light-emitting efficiency and poor stability of quantum dot light-emitting diodes, and achieve the effect of improving light-emitting efficiency and stability

Active Publication Date: 2021-06-22
TCL CORPORATION
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problems of low light extraction efficiency and poor stability of the existing quantum dot light-emitting diodes

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  • A quantum dot light-emitting diode and its preparation method

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Embodiment Construction

[0013] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0014] There are various forms of quantum dot light-emitting diodes, and the quantum dot light-emitting diodes are divided into positive structure and inversion structure, wherein, the quantum dot light-emitting diode of inversion structure may include a substrate, a cathode, a second The light-refracting layer, the quantum dot luminescent layer, the first light-refracting layer and the anode. And the specific implementation manner of the present invention will mainly be as follows figure 1 The quantum dot light-emitting diode with positive structure ...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof, wherein the quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, and is characterized in that the anode and the anode A first refraction layer is arranged between the quantum dot luminescent layer, a second refraction layer is arranged between the cathode and the quantum dot luminescent layer, and the material of the first refraction layer is a first PAMAM dendrimer, and the The second refraction layer material is a composite material, and the composite material includes a second PAMAM dendrimer and metal atom clusters combined in the cavity of the second PAMAM dendrimer, and the algebra of the first PAMAM dendrimer is less than The algebra of the second PAMAM dendrimer. The present invention can effectively improve the light extraction efficiency and stability of the quantum dot light-emitting diode by arranging the first refraction layer between the anode and the quantum dot light-emitting layer, and the second refraction layer between the cathode and the quantum dot light-emitting layer .

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] A lot of research has been done on related technologies based on quantum dot light-emitting diodes (QLEDs), and the ultimate goal of the research is to improve the luminous efficiency and service life of QLEDs. The improvement and optimization of existing technologies cannot improve the efficiency of QLED devices beyond the theoretical efficiency of quantum dots. [0003] In order to improve the theoretical efficiency of quantum dot light-emitting diodes, there are also some related technologies developed. Among them, the main technology is to make some designs on the light-emitting part of the quantum dot light-emitting diodes to improve the corresponding light-emitting efficiency. However, this technology has the defect of dispersion effect. . Therefore prior art still needs to be im...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/56
CPCH10K50/115H10K50/858H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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