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A kind of preparation method of inorganic polyelectrolyte-silicon oxide composite polishing abrasive grain

A polyelectrolyte, composite polishing technology, applied in chemical instruments and methods, polishing compositions containing abrasives, other chemical processes, etc. Demand and other issues to achieve the effect of improving material removal rate, high material removal rate, and reducing surface roughness

Active Publication Date: 2021-07-16
昆山捷纳电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to improve the surface quality and increase the polishing rate (MRR), researchers have studied various types of abrasive grains in recent years, such as silicon oxide, aluminum oxide, cerium oxide, etc., but a single abrasive grain cannot obtain satisfactory polishing results
Among them, silicon oxide is the most widely used because of its stable chemical properties and excellent dispersibility, but its material removal rate is low, which usually cannot meet the industrial needs

Method used

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  • A kind of preparation method of inorganic polyelectrolyte-silicon oxide composite polishing abrasive grain
  • A kind of preparation method of inorganic polyelectrolyte-silicon oxide composite polishing abrasive grain

Examples

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Embodiment 1

[0023] A kind of preparation method of inorganic polyelectrolyte-silicon oxide composite abrasive grain and polishing liquid thereof, its steps are as follows:

[0024] S01: 8wt.% sodium silicate (Na 2 SiO 3 ) solution through the cation exchange resin pretreated with HCl to obtain an active silicic acid solution. The 10 wt.% silica seed solution was then heated to 100° C. and stirred, and the pH of the solution was adjusted to 10 with sodium hydroxide. Next, under the condition of constant stirring, the prepared active silicic acid solution was added dropwise to the above silica seed solution, while using 1 wt.% NaOH solution to keep the pH of the system at about 10. During this process, keep the evaporation rate of the solution equal to the drop rate of silicic acid to maintain a constant liquid level of the system. After the silicic acid was added dropwise, it was continuously stirred and cooled to room temperature, and the mass fraction was adjusted to 10wt.%, to obtain...

Embodiment 2

[0035] Same as Example 1, except that in step S03, the amount of polysilicate magnesium iron aluminum zinc is 0.7wt.% of silicon oxide. A 0.7wt.% inorganic polyelectrolyte-modified silicon oxide composite polishing abrasive grain and its polishing liquid were obtained.

Embodiment 3

[0037] Same as Example 1, except that in step S03, the amount of polysilicate magnesium iron aluminum zinc is 1.0wt.% of silicon oxide. A 1.0wt.% inorganic polyelectrolyte-modified silicon oxide composite polishing abrasive grain and its polishing liquid were obtained.

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Abstract

The invention discloses a method for preparing inorganic polyelectrolyte-silicon oxide composite polishing abrasive grains, comprising the following steps: S01: preparing nano-silica sol; S02: preparing inorganic polyelectrolyte polysilicate magnesium iron aluminum zinc; ℃ and under stirring conditions, the polysilicate magnesium iron aluminum zinc was added dropwise to the nano-silica sol, and continuously stirred for 6 hours; after centrifugation and filtration, an inorganic polyelectrolyte-silicon oxide composite polishing abrasive solution was obtained . The invention provides a method for preparing inorganic polyelectrolyte-silicon oxide composite polishing abrasive grains, which can improve the material removal rate of sapphire substrates and reduce surface roughness.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a method for preparing inorganic polyelectrolyte-silicon oxide composite polishing abrasive grains. Background technique [0002] Single crystal sapphire is widely used in mechanical, optical and information fields due to its high mechanical strength, good light transmission and stable chemical properties. At present, sapphire is the most widely used substrate material for photonic devices, especially light-emitting diodes (LEDs). With the rapid development of technology, the demand for ultra-smooth and high polishing rates of sapphire surfaces is increasing. However, due to the high hardness and strong chemical inertness of sapphire, it is difficult to meet the above requirements at the same time. At present, chemical mechanical polishing (CMP) is considered to be the only technology capable of global planarization that combines chemical and mechanical effects, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14C09G1/02
CPCC09G1/02C09K3/1436
Inventor 雷红王天仙
Owner 昆山捷纳电子材料有限公司
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