Thin film deposition method and device

Abstract

The invention provides a t thin film deposition method and device. The method comprises the following steps that S1, a first precursor and makeup gas are led into a buffer cavity connected with a reaction cavity, the makeup gas is blowing gas or a second precursor, the makeup gas is mixed with the first precursor in a buffer cavity, and after mixing of the makeup gas and the first precursor, a mixture flows into a reaction cavity; S2, leading of the first precursor into the buffer cavity is stopped, the blowing gas and the second precursor are led into the buffer cavity, a valve of a plasma cleaning source, the buffer cavity and the reaction cavity are blown in sequence; and S3, radio frequency power is loaded in the reaction cavity, the second precursor in the reaction cavity is stimulated to form plasmas, the plasmas react with the first precursor, and a thin film is formed on a wafer. Through the method and device, the distribution uniformity of deposited thin film thickness can beimproved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a thin film deposition method and equipment. Background technique [0002] Plasma Enhanced Atomic Layer Deposition (Plasma Enhanced Atomic Layer Deposition, hereinafter referred to as PEALD), the method of depositing thin films by PEALD generally includes the following four steps: [0003] Step 1: After the first precursor, the second precursor and the valve purge gas of the plasma cleaning source are mixed in the buffer chamber, they enter the reaction chamber, and the first precursor is adsorbed on the wafer in the reaction chamber. [0004] Step 2: stop the input of the first precursor, and continue to pass the second precursor and valve purge gas into the reaction chamber to purge the unadsorbed first precursor in the reaction chamber. [0005] Step 3: Turn on the radio frequency device, so that the plasma plasma generated in the reaction chamber excites the molecu...

AI Technical Summary

Problems solved by technology

Using this kind of buffer chamber and the method of depositing thin films by PEALD above will cause the first precursor and the second precursor to mix unevenly in the buffer chamber, and further, it will form a unilateral phenomenon that the amount of the first precursor is adsorbed on the crystal surface. resulting in uneven distribution of deposited film thickness

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