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Artificial heterologous synaptic device based on two-dimensional ferroelectric material and regulation and control method

A synaptic device, a heterogeneous technology, applied in the field of brain-like computing, to achieve the effect of easy device structure and low power consumption

Active Publication Date: 2020-06-26
PEKING UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, it should be noted that most of the research is limited to the realization of homologous synaptic plasticity, which means that the artificial synapse is a two-terminal device, and the adjustment and detection of synaptic weights are implemented on the same pair of ports.

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  • Artificial heterologous synaptic device based on two-dimensional ferroelectric material and regulation and control method
  • Artificial heterologous synaptic device based on two-dimensional ferroelectric material and regulation and control method
  • Artificial heterologous synaptic device based on two-dimensional ferroelectric material and regulation and control method

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Embodiment Construction

[0041] In the following, the present invention is further explained through specific embodiments in conjunction with the drawings.

[0042] Such as figure 1 As shown, the artificial heterologous synapse device of this embodiment includes: a substrate 1, a bottom electrode 2, a functional layer 3, a top electrode 4, an insulation regulating layer 5, and a regulating electrode 6; wherein, the bottom electrode 2, the functional layer 3, and the The top electrode 4 is laminated on the substrate 1 in sequence, the insulation control layer 5 and the control electrode 6 are located on the side of the functional layer 3, the insulation control layer 5 is in direct contact with the functional layer 3, and the control electrode 6 is located on the insulation control layer 5.

[0043] See figure 1 , The preparation steps of an artificial heterologous synapse device based on two-dimensional ferroelectric materials of this embodiment are as follows:

[0044] 1) Using ultraviolet lithography or el...

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Abstract

The invention discloses an artificial heterologous synaptic device based on a two-dimensional ferroelectric material and a regulation and control method. A two-dimensional ferroelectric material within-plane and out-plane polarization coupling is used as a functional layer material to prepare a three-terminal artificial synaptic device for the first time, and the electrical regulation and controlof a third terminal is achieved through the intrinsic polarization coupling characteristics of the material. The added regulation and control terminal can promote or inhibit the weight regulation andcontrol capability of the artificial synaptic device, so that the artificial synaptic device can complete a more complex bionic function. The third terminal is regulated and controlled by an electricfield, and the regulation and control power consumption is extremely low. The device structure is easy to integrate. All devices can be independently regulated and controlled without mutual interference.

Description

Technical field [0001] The invention belongs to the technical field of brain-like computing, and specifically relates to an artificial heterologous synapse device based on a two-dimensional ferroelectric material and a control method. Background technique [0002] In the traditional von Neumann computing architecture, the memory and the arithmetic unit are separated, and a large amount of data is transported back and forth on the bus, which limits the calculation rate and increases the energy consumption. In order to break through the von Neumann bottleneck, people have proposed some new computing paradigms, including brain-like computing and in-storage computing. In the human brain, a large number of synapses and neurons store and process information in parallel with high efficiency and low power consumption. Brain-like computing is a very important step in building a brain-like computer inspired by the human brain. It simulates the synapses and neurons in the human brain from ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C11/22
CPCG11C11/22H10N70/801H10N70/841H10N70/882H10N70/8825H10N70/011
Inventor 杨玉超刘柯钦黄如
Owner PEKING UNIV
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