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An artificial heterosynaptic device and its regulation method based on two-dimensional ferroelectric materials

A synaptic device, a heterogeneous technology, applied in the field of brain-like computing to achieve the effect of low power consumption and easy integration

Active Publication Date: 2021-08-24
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it should be noted that most of the research is limited to the realization of homologous synaptic plasticity, which means that the artificial synapse is a two-terminal device, and the adjustment and detection of synaptic weights are implemented on the same pair of ports.

Method used

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  • An artificial heterosynaptic device and its regulation method based on two-dimensional ferroelectric materials
  • An artificial heterosynaptic device and its regulation method based on two-dimensional ferroelectric materials
  • An artificial heterosynaptic device and its regulation method based on two-dimensional ferroelectric materials

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Embodiment Construction

[0041] The present invention will be further described through specific embodiments below in conjunction with the accompanying drawings.

[0042] like figure 1 As shown, the artificial heterosynaptic device of this embodiment includes: a substrate 1, a bottom electrode 2, a functional layer 3, a top electrode 4, an insulating control layer 5 and a control electrode 6; wherein, the bottom electrode 2, the functional layer 3 and the The top electrode 4 is sequentially stacked on the substrate 1 , the insulating control layer 5 and the control electrode 6 are located on the side of the functional layer 3 , the insulating control layer 5 is in direct contact with the functional layer 3 , and the control electrode 6 is located on the insulating control layer 5 .

[0043] see figure 1 , the preparation steps of an artificial heterosynaptic device based on a two-dimensional ferroelectric material in this embodiment are as follows:

[0044] 1) Defining the pattern of the bottom elec...

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Abstract

The invention discloses a two-dimensional ferroelectric material-based artificial heterogeneous synaptic device and a control method, and proposes for the first time that a two-dimensional ferroelectric material with in-plane and out-of-plane polarization coupling is used as a functional layer material to prepare a three-terminal artificial synapse. The contact device uses the intrinsic polarization coupling characteristics of the material to realize the electrical control of the third terminal. The added control terminal can promote or inhibit the weight control ability of the artificial synapse device, so that the artificial synapse device can complete more complex bionic functions; the third terminal uses electric field for regulation, and the power consumption of regulation is extremely low; the device structure is easy to integrate ;Each device can be adjusted independently without interfering with each other.

Description

technical field [0001] The invention belongs to the technical field of brain-inspired computing, and in particular relates to an artificial heterosynaptic device based on a two-dimensional ferroelectric material and a control method. Background technique [0002] In the traditional von Neumann computing architecture, the memory and the arithmetic unit are separated, and a large amount of data is transported back and forth on the bus, which limits the computing speed and increases energy consumption. In order to break through the von Neumann bottleneck, some new computing paradigms have been proposed, including brain-like computing and in-memory computing. In the human brain, a large number of synapses and neurons store and process information in parallel with high efficiency and low power consumption. Brain-inspired computing is a very important step in building a brain-inspired computer inspired by the human brain. It simulates the synapses and neurons in the human brain f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/22
CPCG11C11/22H10N70/801H10N70/841H10N70/882H10N70/8825H10N70/011
Inventor 杨玉超刘柯钦黄如
Owner PEKING UNIV
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