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Level processing circuit, gate drive circuit and display device

A technology for processing circuits and circuits, which is applied in the fields of level processing circuits, display devices, and gate drive circuits, and can solve problems such as residual charge, inability to discharge the residual charge, and deterioration of thin-film transistor performance.

Active Publication Date: 2020-06-30
FUZHOU BOE OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In a low-temperature environment, due to changes in parameters such as the reverse turn-off time and reverse turn-off voltage of the parasitic diode of the thin film transistor, the liquid crystal equivalent capacitance C of the display device LC and storage capacitor C S The residual charge cannot be released through the thin film transistor in a short time, and will slowly accumulate over time, thus showing the limit power sequence (Limit Power Sequence, referred to as LPS) stripes ( figure 1 )The phenomenon
That is, the performance of the thin film transistor included in the sub-pixel deteriorates in a low-temperature environment, and the electron mobility deteriorates correspondingly, so that different degrees of residual charges occur in different positions of the display screen, which in turn causes LPS stripes to appear on the display screen of the display device.

Method used

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  • Level processing circuit, gate drive circuit and display device
  • Level processing circuit, gate drive circuit and display device
  • Level processing circuit, gate drive circuit and display device

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] The display device includes an array substrate. The array substrate includes a display area and a peripheral area located on the periphery of the display area. The display area includes a plurality of sub-pixels, gate lines, data lines and the like. A sub-pixel includes a pixel circuit, and the pixel circuit may include a thin film transistor as a switching element, a pixel electrode, a common electrode, and the like. The peripheral area includes a Gate...

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Abstract

The embodiment of the invention provides a level processing circuit, a gate drive circuit and a display device, relates to the technical field of display, and can solve the problem that an LPS cross grain phenomenon occurs in the display device when the display device is shut down in a low-temperature environment. A level processing circuit comprises a voltage detection circuit, a switch selectioncircuit and an XAO circuit. The voltage detection circuit is configured to output a high level to the switch selection circuit if the first voltage is greater than or equal to the second voltage andoutput a low level to the switch selection circuit if the first voltage is smaller than the second voltage. The switch selection circuit comprises a first switch and a second switch which are connected in parallel. The second switch comprises a first sub-switch and a first resistor which are connected in series. The switch selection circuit is configured as follows: if the voltage detection circuit outputs a high level, the first switch is turned on, and the high level is output to the XAO circuit, if the voltage detection circuit outputs a low level, the first sub-switch is turned on, and thelow level is output to the XAO circuit.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a level processing circuit, a gate driving circuit and a display device. Background technique [0002] At present, when testing products with high refresh rate and high resolution, for example, at a temperature of -5° C., the display device is turned on and off every 3 seconds. [0003] In a low-temperature environment, due to changes in parameters such as the reverse turn-off time and reverse turn-off voltage of the parasitic diode of the thin film transistor, the liquid crystal equivalent capacitance C of the display device LC and storage capacitor C S The residual charge cannot be released through the thin film transistor in a short time, and will slowly accumulate over time, thus showing the limit power sequence (Limit Power Sequence, referred to as LPS) stripes ( figure 1 )The phenomenon. That is, the performance of the thin film transistor included in the sub-pi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/36
CPCG09G3/3696G09G3/3677
Inventor 陈信刁凯侯清娜陈美珍胡晔查文余仁惠郑上涛谢洪洲
Owner FUZHOU BOE OPTOELECTRONICS TECH CO LTD
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