Level shifter

A level shifter and circuit technology, applied in the direction of logic circuit connection/interface layout, logic circuit coupling/interface using field effect transistors, etc., can solve the problems of low static power consumption, large number of transistors, and large leakage, and achieve Reduce circuit complexity, improve circuit performance, and reduce leakage power consumption

Pending Publication Date: 2020-06-30
北京中科芯蕊科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional level converter adopts a cross-coupled structure, which has the characteristics of small area, fast speed, and low static power consumption, but the range of level conversion it can support is limited, and it cannot support the conversion from near-threshold voltage to normal voltage. Limits the use of near-threshold techniques
The traditional Wilson current mirror structure can effectively support the level conversion of ultra-wide range voltage from near threshold voltage to normal voltage, and can meet the needs of near threshold technology, but it has a large number of transistors and large leakage

Method used

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  • Level shifter

Examples

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Embodiment

[0032] Such as figure 1 As shown, a level shifter includes: a Wilson current mirror circuit and an inverter circuit. Wilson current mirror circuit and inverter circuit are connected.

[0033] The inverter circuit specifically includes: an inverter circuit PMOS transistor MP4 and an inverter circuit NMOS transistor MN3. The output terminals of the Wilson current mirror circuit are respectively connected to the grid of the inverter circuit PMOS tube MP4 and the grid of the inverter circuit NMOS tube MN3; the source of the inverter circuit PMOS tube MP4 is connected to the power supply of the inverter circuit; The drain of the circuit PMOS transistor MP4 is connected to the drain of the inverter circuit NMOS transistor MN3; the source of the inverter circuit NMOS transistor MN3 is grounded.

[0034] The Wilson current mirror circuit specifically includes: a first PMOS transistor MP1, a second PMOS transistor MP2, a third PMOS transistor MP3, a first NMOS transistor MN1 and a se...

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PUM

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Abstract

The invention discloses a level shifter. The level shifter comprises a Wilson current mirror circuit and a phase inverter circuit. The Wilson current mirror circuit is connected with the inverter circuit, the inverter circuit comprises an inverter circuit PMOS tube and an inverter circuit NMOS tube, an output end of the Wilson current mirror circuit is connected with a grid electrode of the PMOS tube of the inverter circuit and a grid electrode of the NMOS tube of the inverter circuit, a source electrode of the PMOS tube of the inverter circuit is connected with a inverter circuit power supply, a drain electrode of the PMOS tube of the inverter circuit is connected with the drain electrode of the NMOS tube of the inverter circuit, and a source electrode of the NMOS transistor of the inverter circuit is grounded. The level shifter has the advantages that the circuit structure is simple, and the delay time and the power consumption of the circuit can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a level shifter. Background technique [0002] Near-threshold technology and multi-power domain technology are currently the mainstream technologies to achieve extremely low power consumption design. Therefore, when designing chips for many low-power applications, multiple power domains are often divided. Circuits with higher performance requirements are divided into high-voltage domains, while circuits with lower performance requirements operate in low-voltage domains. There are a large number of level shifters between different power domains to realize signal transmission between different power domains. [0003] The traditional level converter adopts a cross-coupled structure, which has the characteristics of small area, fast speed, and low static power consumption, but the range of level conversion it can support is limited, and it cannot support the conversion f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185
CPCH03K19/0185
Inventor 乔树山袁甲胡晓宇于增辉凌康
Owner 北京中科芯蕊科技有限公司
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