A kind of programming method and programming system of three-dimensional memory

Abstract

The present application discloses a programming method and a programming system for a three-dimensional memory. The method provides a first turn-on waveform for a first preset word line of a memory structure to be programmed, and provides a first turn-on waveform for a third preset word line and a fourth preset word line of the preset memory structure. The preset word lines respectively provide the second conduction waveform and the third conduction waveform. In the first stage, since the fifth preset value of the second conduction waveform is greater than the second preset value of the first conduction waveform, at this time The residual electrons in the channel of the three-dimensional memory are attracted by the preset storage structure and reach the channel of the preset storage structure; in order to prevent the residual electrons from returning to the storage structure to be programmed, when the third turn-on waveform is in the fifth stage, the turn-on voltage increases from the seventh stage. The preset value is reduced to the eighth preset value, and a voltage barrier is formed in the preset storage structure in conjunction with the voltage passing through the second preset word line, thereby avoiding residual electrons from generating crosstalk during the programming process of the storage structure to be programmed, and realizing This is for the purpose of preventing residual electrons from adversely affecting the program inhibit operation.

Description

technical field [0001] The present application relates to the technical field of memory, and more specifically, to a programming method and a programming system for a three-dimensional memory. Background technique [0002] Memory is a memory device used to save information in modern information technology. With the increasing demand for integration and data storage density of various electronic devices, it is difficult for ordinary two-dimensional memory to further improve its integration and data storage density. Therefore, three-dimensional (3D) memory has emerged as the times require. [0003] For the programming process of three-dimensional NAND memory, its general programming sequence is to start programming from the word line closest to the bottom selection transistor, and end from bottom to top to the word line closest to the top selection transistor. This programming sequence can be called a typical Programming sequence (Normal Program Sequence) or forward programmi...

AI Technical Summary

Problems solved by technology

This part of the electrons will reduce the channel potential of the programming inhibition string in the next programming operation, thereby aggravating the programming crosstalk

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