Unlock instant, AI-driven research and patent intelligence for your innovation.

Quantum dot electroluminescent device and display

An electroluminescent device and quantum dot light-emitting technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems that the performance cannot meet the requirements, the long-term service life of the device and the requirements of industrial production, etc.

Pending Publication Date: 2020-07-07
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Through the improvement of nanocrystalline semiconductor materials and the continuous optimization of the structure of QLED devices, the luminous performance of existing QLED devices has been greatly improved, but there are still some performances that cannot meet the requirements, especially the long-term service life of the device and industrial production. There is still a certain gap between the requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot electroluminescent device and display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The structure of the device is: glass-ITO / PEDOT:PSS hole injection layer / TFB hole transport layer / CdSe / ZnS quantum dot light-emitting layer / ZnO inorganic electron transport layer / Alq3 organic electron transport layer / inert metal Ag layer as cathode, The preparation method is as follows:

[0046] (1) Preparation of the hole injection layer: On the glass-ITO substrate, spin-coat PEDOT:PSS ink (20mg / ml) at a speed of 3000rpm / min, spin-coat for 30 seconds, and then bake at 110°C for 15 minutes to obtain holes Inject layer film.

[0047] (2) Preparation of hole transport layer: Spin-coat TFB ink (20 mg / ml) at a speed of 2000 rpm / min for 30 seconds, and then bake at 150° C. for 30 minutes to obtain a hole transport layer film.

[0048] (3) Preparation of luminescent layer: Spin-coat CdSe / ZnS quantum dot ink (20mg / ml) at a speed of 1500rpm / min for 30 seconds, then bake at 100°C for 10 minutes to obtain a luminescent layer film with a thickness of 18nm.

[0049] (4) ZnO layer...

Embodiment 2

[0053] The structure of the device is: glass-ITO / PEDOT:PSS hole injection layer / TFB hole transport layer / CdSe / ZnS quantum dot light-emitting layer / ZnO inorganic electron transport layer / Alq3 organic electron transport layer / inert metal Ag and active metal Mg The alloy layer is used as the cathode, and the preparation method is as follows:

[0054] (1) Preparation of the hole injection layer: On the glass-ITO substrate, spin-coat PEDOT:PSS ink (20mg / ml) at a speed of 3000rpm / min, spin-coat for 30 seconds, and then bake at 110°C for 15 minutes to obtain holes Inject layer film.

[0055] (2) Preparation of hole transport layer: Spin-coat TFB ink (20 mg / ml) at a speed of 2000 rpm / min for 30 seconds, and then bake at 150° C. for 30 minutes to obtain a hole transport layer film.

[0056] (3) Preparation of luminescent layer: Spin-coat CdSe / ZnS quantum dot ink (20mg / ml) at a speed of 1500rpm / min for 30 seconds, then bake at 100°C for 10 minutes to obtain a luminescent layer film wit...

Embodiment 3

[0061] The structure of the device is: glass-ITO / PEDOT:PSS hole injection layer / TFB hole transport layer / CdSe / ZnS quantum dot light-emitting layer / ZnO inorganic electron transport layer / Alq3 organic electron transport layer / inert metal Ag layer as electron injection Layer / Al cathode layer, the preparation method is as follows:

[0062] (1) Preparation of the hole injection layer: On the glass-ITO substrate, spin-coat PEDOT:PSS ink (20mg / ml) at a speed of 3000rpm / min, spin-coat for 30 seconds, and then bake at 110°C for 15 minutes to obtain holes Inject layer film.

[0063] (2) Preparation of hole transport layer: Spin-coat TFB ink (20 mg / ml) at a speed of 2000 rpm / min for 30 seconds, and then bake at 150° C. for 30 minutes to obtain a hole transport layer film.

[0064] (3) Preparation of luminescent layer: Spin-coat CdSe / ZnS quantum dot ink (20mg / ml) at a speed of 1500rpm / min for 30 seconds, then bake at 100°C for 10 minutes to obtain a luminescent layer film with a thicknes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a quantum dot electroluminescent device with long service life and a display. The invention discloses a quantum dot electroluminescent device and a display comprising the quantum dot electroluminescent device, wherein electron transport layer and an inert metal layer are arranged on a quantum dot light-emitting layer; the electron transport layer comprises an inorganic electron transport layer and an organic electron transport layer which are arranged in a stacked manner; the inert metal layer contains inert metal of which the metal activity is arranged behind hydrogen, so that the inert metal layer is matched with the electron transport layer and the quantum dot light-emitting layer; the service life of the whole quantum dot light-emitting device can be remarkablyprolonged, and the light-emitting stability is improved.

Description

technical field [0001] The invention relates to the technical field of electroluminescence, in particular to a quantum dot electroluminescence device and a display. Background technique [0002] Nanocrystalline semiconductor materials, also known as nanocrystals, are composed of a limited number of atoms, at least two dimensions are on the order of nanometers, and the appearance looks like a very small point or rod / wire, and its internal electron movement is in the order of nanometers. The two-dimensional space is restricted, and the quantum confinement effect is particularly significant. When excited by light or electricity, nanocrystalline semiconductor materials will emit a spectrum with a very narrow half-peak width (usually less than 40nm), and the luminous color is mainly determined by the particle size. Stability and other characteristics. Due to the above-mentioned advantages, nanocrystalline semiconductor materials have great application potential in next-generati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K71/12H10K50/166H10K50/82
Inventor 李哲宋晶尧付东
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD