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A quantum dot light emitting diode

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problems of unbalanced carrier injection, affecting the luminous efficiency and life of the device, and reducing the probability of carrier recombination, so as to improve the recombination efficiency, balance the injection rate, Effect of improving luminous efficiency

Active Publication Date: 2021-06-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode, which aims to solve the problem of the reduction of the recombination probability of carriers in the light-emitting layer caused by the unbalanced carrier injection in the existing QLED device, which affects the Luminous efficiency and lifetime of devices

Method used

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  • A quantum dot light emitting diode
  • A quantum dot light emitting diode
  • A quantum dot light emitting diode

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preparation example Construction

[0035] Such as image 3 As shown, some embodiments of the present invention also provide a method for preparing a seed-dot light-emitting diode, comprising the following steps:

[0036] S01 provides the substrate;

[0037] S03 Form a functional layer on the substrate, the functional layer includes n layers of stacked functional structural units, the functional structural units are composed of stacked electron blocking material layers and electron transport layers, and in the functional structural units The electron blocking material layer is set close to the quantum dot light-emitting layer, the electron transport layer in the functional structural unit is set close to the cathode, and the n is an integer greater than or equal to 2.

[0038] Specifically, quantum dot light-emitting diodes are divided into upright structures and inverted structures. The upright structure includes a stacked anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and...

Embodiment 1

[0051] A quantum dot light-emitting diode, which includes a stacked substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, a functional layer, and a cathode from bottom to top, and the functional layer includes 5 alternately stacked layers. A layer of electron blocking material layer and 5 layers of electron transport layers, the bottom layer of the functional layer is an electron blocking material layer and is arranged close to the quantum dot light-emitting layer, and the top layer of the functional layer is an electron transport layer and is arranged near the cathode; along the anode To the direction of the cathode, the material of each electron blocking material layer is PVK, PVK doped with 1.5wt.%Li-TFSI, PVK doped with 3wt.%Li-TFSI, 4.5wt.%Li- The PVK of TFSI and the PVK of 6wt.%Li-TFSI; The anode is ITO, and the thickness is 100nm; The hole injection layer material is PEDOT:PSS, and the thickness is 40 nm; The hole transp...

Embodiment 2

[0053] A quantum dot light-emitting diode, which includes a stacked substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, a functional layer, and a cathode from bottom to top, and the functional layer includes 5 alternately stacked layers. A layer of electron blocking material layer and 5 layers of electron transport layers, the bottom layer of the functional layer is an electron blocking material layer and is arranged close to the quantum dot light-emitting layer, and the top layer of the functional layer is an electron transport layer and is arranged near the cathode; along the anode To the direction of the cathode, the material of each electron blocking material layer is TFB, TFB doped with 1.5wt.%Li-TFSI, TFB doped with 3wt.%Li-TFSI, 4.5wt.%Li- The TFB of TFSI and the TFB of 6wt.%Li-TFSI; The anode is ITO, and the thickness is 100nm; The hole injection layer material is PEDOT:PSS, and the thickness is 40 nm; The hole transp...

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Abstract

The invention discloses a quantum dot light-emitting diode, comprising a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, a functional layer is arranged between the cathode and the quantum dot light-emitting layer, and the functional layer includes n layers A functional structural unit arranged in layers, the functional structural unit is composed of an electron blocking material layer and an electron transport layer arranged in layers, the electron blocking material layer in the functional structural unit is arranged close to the quantum dot light-emitting layer, and the functional structural unit is The electron transport layer is disposed close to the cathode, and the n is an integer greater than or equal to 1. The quantum dot light-emitting diode of the present invention can reduce the transmission rate of electrons to the quantum dot light-emitting layer through the arrangement of the functional layer, so as to balance the injection rate of electrons and holes, so as to improve the recombination efficiency of carriers in the quantum dot layer, Thus, the luminous efficiency, stability and service life of the quantum dot light-emitting diode are improved.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a quantum dot light-emitting diode. Background technique [0002] Quantum dot light-emitting diode (QLED) is a typical sandwich structure, which is composed of electrodes, functional layers, and light-emitting layers. Under the excitation of the applied voltage, the carriers enter the quantum dots from each functional layer through the electrodes at both ends to recombine to form excitons, and the recombined excitons release photons in the form of radiative transitions, thereby emitting light. Because colloidal quantum dots have the characteristics of high luminous efficiency, high color purity, wide color gamut, and good stability, QLED not only inherits these excellent properties of quantum dots, but also has self-illumination, wide viewing angle, and bendability. Features, showing great prospects for commercial application, has become an important research direction in the field o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/166H10K50/18H10K71/00H10K50/00
Inventor 聂志文杨一行
Owner TCL CORPORATION
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