30results about How to "Optical performance impact" patented technology

The invention provides a liquid crystal display device and a backlight module thereof. The backlight module comprises a light guide panel, an optical film, a binding part and fixing columns; the optical film is fixed onto the light guide panel through the binding part, a first positioning hole is formed in the light guide panel, a second positioning hole is formed in the optical film, the first positioning hole and the second positioning hole are oppositely arranged, and the inner wall of each of the first positioning hole and the second positioning hole is connected with side walls of the fixing columns. The invention further provides the liquid crystal display device. By the arrangement, displacement of the optical film on the horizontal and vertical directions can be prevented by the backlight module, folding of the optical film can be prevented comprehensively, and optical performance of the liquid crystal display device is ensured to be unaffected by displacement of the optical film.

The invention discloses a quantum dot light-emitting diode, comprising a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, a functional layer is arranged between the cathode and the quantum dot light-emitting layer, and the functional layer includes n layers A functional structural unit arranged in layers, the functional structural unit is composed of an electron blocking material layer and an electron transport layer arranged in layers, the electron blocking material layer in the functional structural unit is arranged close to the quantum dot light-emitting layer, and the functional structural unit is The electron transport layer is disposed close to the cathode, and the n is an integer greater than or equal to 1. The quantum dot light-emitting diode of the present invention can reduce the transmission rate of electrons to the quantum dot light-emitting layer through the arrangement of the functional layer, so as to balance the injection rate of electrons and holes, so as to improve the recombination efficiency of carriers in the quantum dot layer, Thus, the luminous efficiency, stability and service life of the quantum dot light-emitting diode are improved.

The invention provides a polymer rectangular optical waveguide and micro-fluidic three-dimensional integrated chip and a preparation method thereof, and belongs to the preparation technical field of polymer rectangular optical waveguide three-dimensional hybrid integrated chips. According to the technical scheme of the invention, the impression or carbon dioxide laser-written method is conducted to prepare a micro-fluidic groove and a liquid injection hole on a methyl methacrylate substrate. Meanwhile, a raised rectangular optical waveguide is prepared on another substrate of the same material with the micro-fluidic layer through the wet etching process, wherein the glass transition temperature of the photosensitivepolymer material for preparing the raised rectangular optical waveguide is higher than the glass transition temperature of methyl methacrylate. Through the one-time hot stamping process, the center ply of the optical waveguide is pressed into the interior of the methyl methacrylate substrate, and the surface layer of the center ply of the optical waveguide is exposed. In this way, the application of the wet etching-based rectangular optical waveguide in the three-dimensional integration field is realized. Meanwhile, the bending loss and the scattering loss of the waveguide are lowered.

The invention discloses a doping modification method for a CVD (Chemical Vapor Deposition) ZnS crystal material. The doping modification method comprises the following steps: before deposition, adding a metal M into a zinc crucible, or an alloy Zn-M of M and zinc as a doping agent, performing heating melting, and uniformly mixing so as to obtain an M-doped zinc raw material; further performing chemcial vapor deposition, after deposition is completed, performing constant-temperature constant-pressure thermal treatment, thereby improving the mechanical and mechanical properties of the CVD ZnS crystal material. By adopting the method, on premise that the infrared permeation property of the CVD ZnS crystal material is not remarkably affected, the effect of improving the mechanical property of the CVD ZnS is achieved, the mechanical properties of the CVD ZnS crystal material are improved, the mechanical strength of the CVD ZnS crystal material is improved, the corrosion resistance and the thermal impact resistance is improved, and the method is applicable to on-scale production and commercial application.

The invention relates to the technical field of optical films, in particular to an optical diffusion film and a preparation method thereof. In order to overcome the defects of low light brightness and low scattering uniformity caused by mixed scattering particles with large particle sizes and small particle sizes in the conventional optical diffusion film, the invention provides the optical diffusion film and the preparation method thereof. The optical diffusion film comprises a base material, wherein the base material comprises small-granule scattering particles with the particle size of 1 to 10 mu m; at least one of two sides of the base material is provided with large-granule scattering particles with the particle size of 40 to 100 mu m; and the large-granule scattering particles are adhered to the surface of the base material through bonding resin. The provided optical diffusion film has high light transmittance and haze; and therefore, the optical diffusion film has high brightness and scattering uniformity. The preparation method has a simple process and is easy to operate.